Field emission properties of a three-dimensional network of single-walled carbon nanotubes inside pores of porous silicon

Jungwoo Lee, Taehee Park, Jongtaek Lee, Heesu Kim, Sanghun Lee, Haiwon Lee, Whikun Yi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports the characteristic field emission (FE) properties of single-walled carbon nanotubes (SWNTs) synthesized on the inside pores of a porous silicon (PS) substrate, as well as on the top surface of a PS substrate. Their turn-on fields and emission current densities are measured and compared with those of other types of SWNTs in similar environments. Investigation of field emission properties of single-walled carbon nanotubes (SWNTs) synthesized on the inside pores of a porous silicon (PS) substrate reveals a low turn-on field of about 2.25 V μm -1 at 10 μA/cm 2 and a high field-enhancement factor (6182) compare with other samples. A life time stability test is performed by monitoring the current density change before and after repeated exposure to O 2, suggesting that the pore channel can effectively prevent O 2 + ion etching from destroying the SWNTs within the pores of the PS layer.

Original languageEnglish
Title of host publicationTechnical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om
Pages362-363
Number of pages2
DOIs
StatePublished - 2012 Nov 19
Event25th International Vacuum Nanoelectronics Conference, IVNC 2012 - Jeju, Korea, Republic of
Duration: 2012 Jul 92012 Jul 13

Publication series

NameTechnical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012

Other

Other25th International Vacuum Nanoelectronics Conference, IVNC 2012
CountryKorea, Republic of
CityJeju
Period12/07/912/07/13

Keywords

  • Field emission
  • carbon nanotube
  • porous silicon

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  • Cite this

    Lee, J., Park, T., Lee, J., Kim, H., Lee, S., Lee, H., & Yi, W. (2012). Field emission properties of a three-dimensional network of single-walled carbon nanotubes inside pores of porous silicon. In Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om (pp. 362-363). [6316970] (Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012). https://doi.org/10.1109/IVNC.2012.6316970