Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor

B. H. Choi, S. W. Hwang, I. G. Kim, H. C. Shin, Yong Kim, Eun Kyu Kim

Research output: Contribution to journalArticle

97 Citations (Scopus)

Abstract

A quantum-dot transistor based on silicon self-assembled quantum dots has been fabricated. The device shows staircases and oscillations in the drain current at room temperature. These data are interpreted as due to single electron tunneling through the dots located in the shortest current path between the source and the drain electrodes. The dot size calculated from the data is ∼7 nm, which is consistent with the size of the self-assembled dots incorporated in the transistor.

Original languageEnglish
Pages (from-to)3129-3131
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number21
DOIs
StatePublished - 1998 Dec 1

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transistors
quantum dots
fabrication
stairways
silicon
room temperature
electron tunneling
oscillations
electrodes

Cite this

Choi, B. H. ; Hwang, S. W. ; Kim, I. G. ; Shin, H. C. ; Kim, Yong ; Kim, Eun Kyu. / Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor. In: Applied Physics Letters. 1998 ; Vol. 73, No. 21. pp. 3129-3131.
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Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor. / Choi, B. H.; Hwang, S. W.; Kim, I. G.; Shin, H. C.; Kim, Yong; Kim, Eun Kyu.

In: Applied Physics Letters, Vol. 73, No. 21, 01.12.1998, p. 3129-3131.

Research output: Contribution to journalArticle

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