Fabrication and optoelectronic properties of novel p-Si/PPy/n-CuxIn1−xO hybrid heterojunction

K. Mageshwari, Inje Cho, Jinsub Park

Research output: Contribution to journalArticle

Abstract

In the present work, we report the photoresponse characteristics of the hybrid heterojunction consisting of polypyrrole (PPy) sandwiched between p-Si substrate and n-CuxIn1−xO film. Experimental results revealed that the PPy interlayer influence the electronic conduction through the hybrid heterojunction. Structural analysis by X-ray diffraction showed the diffraction peaks corresponding to CuO and In2O3, while the optical absorption spectra exhibited strong absorption in both the UV as well as visible regions. Morphological analysis by scanning electron microscopy showed the uniform coverage on the Si substrate, and the effective binding of CuxIn1−xO and PPy. Raman spectroscopy showed the vibration modes corresponding to CuO, In2O3and PPy. The p-Si/PPy/n-CuxIn1−xO hybrid heterojunction demonstrated excellent rectifying behavior and improved electrical characteristics such as high rectification ratio (∼220), lower threshold voltage (∼1.8 V) and ideality factor (∼2.06) due to the PPy insertion and photon illumination. The enhanced electrical characteristics of the hybrid p-Si/PPy/n-CuxIn1−xO heterojunction was discussed with respect to the energy band structure, and found that the intermediate PPy layer acting as a hole transporting layer improves the charge selectivity and facilitates the effective transport of charge carriers towards the respective electrodes.

Original languageEnglish
Pages (from-to)145-151
Number of pages7
JournalJournal of Alloys and Compounds
Volume690
DOIs
StatePublished - 2017 Jan 1

Fingerprint

Polypyrroles
Optoelectronic devices
Heterojunctions
Fabrication
Band structure
polypyrrole
Substrates
Charge carriers
Threshold voltage
Structural analysis
Light absorption
Raman spectroscopy
Absorption spectra
Photons
Diffraction
Lighting
X ray diffraction
Scanning electron microscopy
Electrodes

Keywords

  • Chemical polymerization
  • CuInO
  • Hybrid heterojunction
  • Photoresponse
  • Polypyrrole
  • Sol-gel

Cite this

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title = "Fabrication and optoelectronic properties of novel p-Si/PPy/n-CuxIn1−xO hybrid heterojunction",
abstract = "In the present work, we report the photoresponse characteristics of the hybrid heterojunction consisting of polypyrrole (PPy) sandwiched between p-Si substrate and n-CuxIn1−xO film. Experimental results revealed that the PPy interlayer influence the electronic conduction through the hybrid heterojunction. Structural analysis by X-ray diffraction showed the diffraction peaks corresponding to CuO and In2O3, while the optical absorption spectra exhibited strong absorption in both the UV as well as visible regions. Morphological analysis by scanning electron microscopy showed the uniform coverage on the Si substrate, and the effective binding of CuxIn1−xO and PPy. Raman spectroscopy showed the vibration modes corresponding to CuO, In2O3and PPy. The p-Si/PPy/n-CuxIn1−xO hybrid heterojunction demonstrated excellent rectifying behavior and improved electrical characteristics such as high rectification ratio (∼220), lower threshold voltage (∼1.8 V) and ideality factor (∼2.06) due to the PPy insertion and photon illumination. The enhanced electrical characteristics of the hybrid p-Si/PPy/n-CuxIn1−xO heterojunction was discussed with respect to the energy band structure, and found that the intermediate PPy layer acting as a hole transporting layer improves the charge selectivity and facilitates the effective transport of charge carriers towards the respective electrodes.",
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Fabrication and optoelectronic properties of novel p-Si/PPy/n-CuxIn1−xO hybrid heterojunction. / Mageshwari, K.; Cho, Inje; Park, Jinsub.

In: Journal of Alloys and Compounds, Vol. 690, 01.01.2017, p. 145-151.

Research output: Contribution to journalArticle

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AB - In the present work, we report the photoresponse characteristics of the hybrid heterojunction consisting of polypyrrole (PPy) sandwiched between p-Si substrate and n-CuxIn1−xO film. Experimental results revealed that the PPy interlayer influence the electronic conduction through the hybrid heterojunction. Structural analysis by X-ray diffraction showed the diffraction peaks corresponding to CuO and In2O3, while the optical absorption spectra exhibited strong absorption in both the UV as well as visible regions. Morphological analysis by scanning electron microscopy showed the uniform coverage on the Si substrate, and the effective binding of CuxIn1−xO and PPy. Raman spectroscopy showed the vibration modes corresponding to CuO, In2O3and PPy. The p-Si/PPy/n-CuxIn1−xO hybrid heterojunction demonstrated excellent rectifying behavior and improved electrical characteristics such as high rectification ratio (∼220), lower threshold voltage (∼1.8 V) and ideality factor (∼2.06) due to the PPy insertion and photon illumination. The enhanced electrical characteristics of the hybrid p-Si/PPy/n-CuxIn1−xO heterojunction was discussed with respect to the energy band structure, and found that the intermediate PPy layer acting as a hole transporting layer improves the charge selectivity and facilitates the effective transport of charge carriers towards the respective electrodes.

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