Extremely proximity gettering for semiconductor devices

Jea Gun Park, Gon Sub Lee, Jin Seo Lee, Kazunari Kurita, Hisashi Furuya

Research output: Contribution to journalArticle

11 Scopus citations


We investigated the gettering efficiency of iron and nickel in Czochralski (CZ) silicon wafers depending on crystalline nature such as interstitial-silicon-dominant or vacancy-dominant crystal growth. After a typical heat treatment for dynamic random access memories (DRAMs), the density of silicon oxide precipitates in the vacancy-dominant crystal regions was approximately two orders higher than interstitial-silicon-dominant crystal regions. After a DRAM heat treatment, irons were preferably gathered at vacancy-dominant crystal region while nickels were selectively at only an interstitial-silicon-dominant crystal region. Silicon wafers designed with extreme gettering ability via rapid thermal annealing (RTA) at 1150 °C for 10 s using NH3 and Ar gas mixture produced the "M" shape of oxygen precipitates in which the peak density of the precipitates was in the range of ∼3 × 1010 cm-3 while the bulk density was in the range of ∼2 × 109 cm-3. The RTA silicon wafer completely eliminated irons and nickels from the wafer surface that are gathered at oxygen precipitates in silicon bulk during a DRAM heat treatment.

Original languageEnglish
Pages (from-to)249-256
Number of pages8
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number2-3 SPEC. ISS.
StatePublished - 2006 Oct 15


  • DLTS
  • Gettering
  • Lifetime
  • Rapid thermal annealing

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