Etching characteristics of Ta and TaN using Cl2/Ar inductively coupled plasma

M. H. Shin, S. W. Na, N. E. Lee, Jinho Ahn

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Etching characteristics of Ta and TaN layers on SiO2 were investigated in Cl2/Ar inductively coupled plasmas. Etch rate and selectivity to the photoresist and SiO2 under-layer were measured by varying Cl2/Ar gas mixing ratio, the top electrode power, and the bottom electrode power. The etch rate results combined with OES and XPS measurements for the Cl radicals in the plasma and the etched surfaces, respectively, suggest that Cl radicals play an important role in determining the etch rates of Ta and TaN, in which the radical density is greatly affected by the percentage of Ar in the etch gas. Etch selectivities of Ta/SiO 2 and TaN/SiO2 were increased with increasing the Cl 2/(Cl2 + Ar) flow ratio. Increase in the bottom electrode power generally increased the SiO2 etch rate and, as a result, decreased the Ta and TaN etch selectivity over SiO2 significantly.

Original languageEnglish
Pages (from-to)230-234
Number of pages5
JournalThin Solid Films
Volume506-507
DOIs
StatePublished - 2006 May 26

Fingerprint

Inductively coupled plasma
Etching
etching
Electrodes
selectivity
Gases
electrodes
Photoresists
X ray photoelectron spectroscopy
mixing ratios
gases
photoresists
Plasmas

Keywords

  • Extreme ultraviolet lithography
  • Inductively coupled plasma
  • Plasma etching
  • Ta
  • TaN

Cite this

Shin, M. H. ; Na, S. W. ; Lee, N. E. ; Ahn, Jinho. / Etching characteristics of Ta and TaN using Cl2/Ar inductively coupled plasma. In: Thin Solid Films. 2006 ; Vol. 506-507. pp. 230-234.
@article{b72efddd0b11488fa8142703d2f21ca5,
title = "Etching characteristics of Ta and TaN using Cl2/Ar inductively coupled plasma",
abstract = "Etching characteristics of Ta and TaN layers on SiO2 were investigated in Cl2/Ar inductively coupled plasmas. Etch rate and selectivity to the photoresist and SiO2 under-layer were measured by varying Cl2/Ar gas mixing ratio, the top electrode power, and the bottom electrode power. The etch rate results combined with OES and XPS measurements for the Cl radicals in the plasma and the etched surfaces, respectively, suggest that Cl radicals play an important role in determining the etch rates of Ta and TaN, in which the radical density is greatly affected by the percentage of Ar in the etch gas. Etch selectivities of Ta/SiO 2 and TaN/SiO2 were increased with increasing the Cl 2/(Cl2 + Ar) flow ratio. Increase in the bottom electrode power generally increased the SiO2 etch rate and, as a result, decreased the Ta and TaN etch selectivity over SiO2 significantly.",
keywords = "Extreme ultraviolet lithography, Inductively coupled plasma, Plasma etching, Ta, TaN",
author = "Shin, {M. H.} and Na, {S. W.} and Lee, {N. E.} and Jinho Ahn",
year = "2006",
month = "5",
day = "26",
doi = "10.1016/j.tsf.2005.08.019",
language = "English",
volume = "506-507",
pages = "230--234",
journal = "Thin Solid Films",
issn = "0040-6090",

}

Etching characteristics of Ta and TaN using Cl2/Ar inductively coupled plasma. / Shin, M. H.; Na, S. W.; Lee, N. E.; Ahn, Jinho.

In: Thin Solid Films, Vol. 506-507, 26.05.2006, p. 230-234.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Etching characteristics of Ta and TaN using Cl2/Ar inductively coupled plasma

AU - Shin, M. H.

AU - Na, S. W.

AU - Lee, N. E.

AU - Ahn, Jinho

PY - 2006/5/26

Y1 - 2006/5/26

N2 - Etching characteristics of Ta and TaN layers on SiO2 were investigated in Cl2/Ar inductively coupled plasmas. Etch rate and selectivity to the photoresist and SiO2 under-layer were measured by varying Cl2/Ar gas mixing ratio, the top electrode power, and the bottom electrode power. The etch rate results combined with OES and XPS measurements for the Cl radicals in the plasma and the etched surfaces, respectively, suggest that Cl radicals play an important role in determining the etch rates of Ta and TaN, in which the radical density is greatly affected by the percentage of Ar in the etch gas. Etch selectivities of Ta/SiO 2 and TaN/SiO2 were increased with increasing the Cl 2/(Cl2 + Ar) flow ratio. Increase in the bottom electrode power generally increased the SiO2 etch rate and, as a result, decreased the Ta and TaN etch selectivity over SiO2 significantly.

AB - Etching characteristics of Ta and TaN layers on SiO2 were investigated in Cl2/Ar inductively coupled plasmas. Etch rate and selectivity to the photoresist and SiO2 under-layer were measured by varying Cl2/Ar gas mixing ratio, the top electrode power, and the bottom electrode power. The etch rate results combined with OES and XPS measurements for the Cl radicals in the plasma and the etched surfaces, respectively, suggest that Cl radicals play an important role in determining the etch rates of Ta and TaN, in which the radical density is greatly affected by the percentage of Ar in the etch gas. Etch selectivities of Ta/SiO 2 and TaN/SiO2 were increased with increasing the Cl 2/(Cl2 + Ar) flow ratio. Increase in the bottom electrode power generally increased the SiO2 etch rate and, as a result, decreased the Ta and TaN etch selectivity over SiO2 significantly.

KW - Extreme ultraviolet lithography

KW - Inductively coupled plasma

KW - Plasma etching

KW - Ta

KW - TaN

UR - http://www.scopus.com/inward/record.url?scp=33645220617&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.08.019

DO - 10.1016/j.tsf.2005.08.019

M3 - Article

AN - SCOPUS:33645220617

VL - 506-507

SP - 230

EP - 234

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -