Environmentally clean slurry using nano-TiO 2 -abrasive mixed with oxidizer H 2 O 2 for ruthenium-film chemical mechanical planarization

Hao Cui, Jin Hyung Park, Jea Gun Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A colloidal silica-abrasive-based slurry mixed with periodate salts has been used for chemical mechanical planarization (CMP) of ruthenium (Ru) film in semiconductor-chip fabrication. This slurry has serious environmental problems such as generation of toxic RuO 4 gas, corrosion, and ionic contamination. We developed an environmentally clean slurry using nano-TiO 2 abrasive mixed with hydrogen peroxide (H 2 O 2 ) for the purpose of Ru-film CMP. Moreover, this slurry is free of corrosion and ionic contamination. The polishing rates of Ru and SiO 2 films with this slurry strongly depended on the H 2 O 2 concentration; the Ru-film polishing rate rapidly increased with H 2 O 2 concentration up to 1 wt% and then slightly decreased or saturated, whereas the SiO 2 -film polishing rate abruptly dropped to ∼50 Å/min. In particular, the adsorbed amount of H 2 O 2 on nano-TiO 2 abrasive directly determined the Ru-film polishing rate, indicating a new CMP mechanism of Ru film in the slurry.

Original languageEnglish
Pages (from-to)844-850
Number of pages7
JournalApplied Surface Science
Volume282
DOIs
StatePublished - 2013 Oct 1

Fingerprint

Chemical mechanical polishing
Ruthenium
Abrasives
Polishing
Contamination
Corrosion
Poisons
Hydrogen peroxide
Silicon Dioxide
Hydrogen Peroxide
Salts
Gases
Silica
Semiconductor materials
Fabrication
Hydrogen

Keywords

  • Chemical mechanical polishing
  • Ruthenium

Cite this

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title = "Environmentally clean slurry using nano-TiO 2 -abrasive mixed with oxidizer H 2 O 2 for ruthenium-film chemical mechanical planarization",
abstract = "A colloidal silica-abrasive-based slurry mixed with periodate salts has been used for chemical mechanical planarization (CMP) of ruthenium (Ru) film in semiconductor-chip fabrication. This slurry has serious environmental problems such as generation of toxic RuO 4 gas, corrosion, and ionic contamination. We developed an environmentally clean slurry using nano-TiO 2 abrasive mixed with hydrogen peroxide (H 2 O 2 ) for the purpose of Ru-film CMP. Moreover, this slurry is free of corrosion and ionic contamination. The polishing rates of Ru and SiO 2 films with this slurry strongly depended on the H 2 O 2 concentration; the Ru-film polishing rate rapidly increased with H 2 O 2 concentration up to 1 wt{\%} and then slightly decreased or saturated, whereas the SiO 2 -film polishing rate abruptly dropped to ∼50 {\AA}/min. In particular, the adsorbed amount of H 2 O 2 on nano-TiO 2 abrasive directly determined the Ru-film polishing rate, indicating a new CMP mechanism of Ru film in the slurry.",
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Environmentally clean slurry using nano-TiO 2 -abrasive mixed with oxidizer H 2 O 2 for ruthenium-film chemical mechanical planarization . / Cui, Hao; Park, Jin Hyung; Park, Jea Gun.

In: Applied Surface Science, Vol. 282, 01.10.2013, p. 844-850.

Research output: Contribution to journalArticle

TY - JOUR

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N2 - A colloidal silica-abrasive-based slurry mixed with periodate salts has been used for chemical mechanical planarization (CMP) of ruthenium (Ru) film in semiconductor-chip fabrication. This slurry has serious environmental problems such as generation of toxic RuO 4 gas, corrosion, and ionic contamination. We developed an environmentally clean slurry using nano-TiO 2 abrasive mixed with hydrogen peroxide (H 2 O 2 ) for the purpose of Ru-film CMP. Moreover, this slurry is free of corrosion and ionic contamination. The polishing rates of Ru and SiO 2 films with this slurry strongly depended on the H 2 O 2 concentration; the Ru-film polishing rate rapidly increased with H 2 O 2 concentration up to 1 wt% and then slightly decreased or saturated, whereas the SiO 2 -film polishing rate abruptly dropped to ∼50 Å/min. In particular, the adsorbed amount of H 2 O 2 on nano-TiO 2 abrasive directly determined the Ru-film polishing rate, indicating a new CMP mechanism of Ru film in the slurry.

AB - A colloidal silica-abrasive-based slurry mixed with periodate salts has been used for chemical mechanical planarization (CMP) of ruthenium (Ru) film in semiconductor-chip fabrication. This slurry has serious environmental problems such as generation of toxic RuO 4 gas, corrosion, and ionic contamination. We developed an environmentally clean slurry using nano-TiO 2 abrasive mixed with hydrogen peroxide (H 2 O 2 ) for the purpose of Ru-film CMP. Moreover, this slurry is free of corrosion and ionic contamination. The polishing rates of Ru and SiO 2 films with this slurry strongly depended on the H 2 O 2 concentration; the Ru-film polishing rate rapidly increased with H 2 O 2 concentration up to 1 wt% and then slightly decreased or saturated, whereas the SiO 2 -film polishing rate abruptly dropped to ∼50 Å/min. In particular, the adsorbed amount of H 2 O 2 on nano-TiO 2 abrasive directly determined the Ru-film polishing rate, indicating a new CMP mechanism of Ru film in the slurry.

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