Enhancement of the electrical characteristics of indium-zinc tin-oxide thin-film transistors utilizing dual-channel layers

Dohyun Oh, Joon Sung Ahn, Woon Jo Cho, Taewhan Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Thin film transistors (TFTs) with indium-zinc tin-oxide (IZTO) dual-channel layers were fabricated on heavily-doped p-type Si substrates by using a tilted dual-target radio-frequency magnetron sputtering system. The number of oxygen vacancies in the IZTO channel layer decreased with increasing oxygen partial pressure, resulting in a decrease in the conductivity. The threshold voltage (Vth) shifted toward positive gate-source voltage with increasing oxygen partial pressure for the growth of the IZTO layer because of a decrease in the carrier concentration. The Vth, the mobility, the on/off-current ratio, and the subthreshold swing of the dual-channel IZTO TFTs were 3.5 V, 7.1 cm2/V s, 1.3 V/decade, and 8.2 × 10 6, respectively, which was enhanced by utilizing dual-channel layers consisting of a top channel deposited at a high oxygen partial pressure and a bottom channel deposited at a low oxygen partial pressure.

Original languageEnglish
Pages (from-to)932-935
Number of pages4
JournalCurrent Applied Physics
Volume14
Issue number7
DOIs
StatePublished - 2014 Jan 1

Fingerprint

Indium
Thin film transistors
Zinc oxide
Tin oxides
Partial pressure
zinc oxides
tin oxides
Oxide films
indium
transistors
Oxygen
partial pressure
augmentation
thin films
oxygen
Oxygen vacancies
Threshold voltage
Magnetron sputtering
Carrier concentration
threshold voltage

Keywords

  • Dual-channel layer
  • Indium-zinc tin-oxide thin-film transistor
  • Oxygen partial pressure
  • Threshold voltage

Cite this

@article{e730451f87614de6bbcff5ab6df14556,
title = "Enhancement of the electrical characteristics of indium-zinc tin-oxide thin-film transistors utilizing dual-channel layers",
abstract = "Thin film transistors (TFTs) with indium-zinc tin-oxide (IZTO) dual-channel layers were fabricated on heavily-doped p-type Si substrates by using a tilted dual-target radio-frequency magnetron sputtering system. The number of oxygen vacancies in the IZTO channel layer decreased with increasing oxygen partial pressure, resulting in a decrease in the conductivity. The threshold voltage (Vth) shifted toward positive gate-source voltage with increasing oxygen partial pressure for the growth of the IZTO layer because of a decrease in the carrier concentration. The Vth, the mobility, the on/off-current ratio, and the subthreshold swing of the dual-channel IZTO TFTs were 3.5 V, 7.1 cm2/V s, 1.3 V/decade, and 8.2 × 10 6, respectively, which was enhanced by utilizing dual-channel layers consisting of a top channel deposited at a high oxygen partial pressure and a bottom channel deposited at a low oxygen partial pressure.",
keywords = "Dual-channel layer, Indium-zinc tin-oxide thin-film transistor, Oxygen partial pressure, Threshold voltage",
author = "Dohyun Oh and Ahn, {Joon Sung} and Cho, {Woon Jo} and Taewhan Kim",
year = "2014",
month = "1",
day = "1",
doi = "10.1016/j.cap.2014.04.008",
language = "English",
volume = "14",
pages = "932--935",
journal = "Current Applied Physics",
issn = "1567-1739",
number = "7",

}

Enhancement of the electrical characteristics of indium-zinc tin-oxide thin-film transistors utilizing dual-channel layers. / Oh, Dohyun; Ahn, Joon Sung; Cho, Woon Jo; Kim, Taewhan.

In: Current Applied Physics, Vol. 14, No. 7, 01.01.2014, p. 932-935.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhancement of the electrical characteristics of indium-zinc tin-oxide thin-film transistors utilizing dual-channel layers

AU - Oh, Dohyun

AU - Ahn, Joon Sung

AU - Cho, Woon Jo

AU - Kim, Taewhan

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Thin film transistors (TFTs) with indium-zinc tin-oxide (IZTO) dual-channel layers were fabricated on heavily-doped p-type Si substrates by using a tilted dual-target radio-frequency magnetron sputtering system. The number of oxygen vacancies in the IZTO channel layer decreased with increasing oxygen partial pressure, resulting in a decrease in the conductivity. The threshold voltage (Vth) shifted toward positive gate-source voltage with increasing oxygen partial pressure for the growth of the IZTO layer because of a decrease in the carrier concentration. The Vth, the mobility, the on/off-current ratio, and the subthreshold swing of the dual-channel IZTO TFTs were 3.5 V, 7.1 cm2/V s, 1.3 V/decade, and 8.2 × 10 6, respectively, which was enhanced by utilizing dual-channel layers consisting of a top channel deposited at a high oxygen partial pressure and a bottom channel deposited at a low oxygen partial pressure.

AB - Thin film transistors (TFTs) with indium-zinc tin-oxide (IZTO) dual-channel layers were fabricated on heavily-doped p-type Si substrates by using a tilted dual-target radio-frequency magnetron sputtering system. The number of oxygen vacancies in the IZTO channel layer decreased with increasing oxygen partial pressure, resulting in a decrease in the conductivity. The threshold voltage (Vth) shifted toward positive gate-source voltage with increasing oxygen partial pressure for the growth of the IZTO layer because of a decrease in the carrier concentration. The Vth, the mobility, the on/off-current ratio, and the subthreshold swing of the dual-channel IZTO TFTs were 3.5 V, 7.1 cm2/V s, 1.3 V/decade, and 8.2 × 10 6, respectively, which was enhanced by utilizing dual-channel layers consisting of a top channel deposited at a high oxygen partial pressure and a bottom channel deposited at a low oxygen partial pressure.

KW - Dual-channel layer

KW - Indium-zinc tin-oxide thin-film transistor

KW - Oxygen partial pressure

KW - Threshold voltage

UR - http://www.scopus.com/inward/record.url?scp=84901301868&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2014.04.008

DO - 10.1016/j.cap.2014.04.008

M3 - Article

AN - SCOPUS:84901301868

VL - 14

SP - 932

EP - 935

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 7

ER -