Enhancement of initial growth of ZnO films on layer-structured Bi2Te3 by atomic layer deposition

Kwang Chon Kim, Cheol Jin Cho, Joohwi Lee, Hyun Jae Kim, Doo Seok Jeong, Seung Hyub Baek, Jin Sang Kim, Seong Keun Kim

Research output: Contribution to journalArticle

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Abstract

The initial growth behavior of ZnO films by atomic layer deposition (ALD) on layer-structured Bi2Te3 was investigated. Despite the lack of adsorption sites on the basal plane of Bi2Te3, negligible incubation in the ALD of ZnO on Bi2Te3 was found in the temperature range from 100 to 160 °C, and even the enhancement of the initial growth was observed at 200 °C. We demonstrate that a ZnTe interfacial layer was formed in the early growth stage by the interaction between diethylzinc and Bi2Te3, which improved the nucleation of ZnO on the basal plane of Bi2Te3. These results indicate that surface modification via the interaction between a precursor and layer-structured materials is an efficient way to achieve fluent and uniform nucleation on layer-structured materials such as Bi2Te3.

Original languageEnglish
Pages (from-to)6448-6453
Number of pages6
JournalChemistry of Materials
Volume26
Issue number22
DOIs
StatePublished - 2014 Nov 25

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Atomic layer deposition
Nucleation
Surface treatment
Adsorption
Temperature

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Kim, Kwang Chon ; Cho, Cheol Jin ; Lee, Joohwi ; Kim, Hyun Jae ; Jeong, Doo Seok ; Baek, Seung Hyub ; Kim, Jin Sang ; Kim, Seong Keun. / Enhancement of initial growth of ZnO films on layer-structured Bi2Te3 by atomic layer deposition. In: Chemistry of Materials. 2014 ; Vol. 26, No. 22. pp. 6448-6453.
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abstract = "The initial growth behavior of ZnO films by atomic layer deposition (ALD) on layer-structured Bi2Te3 was investigated. Despite the lack of adsorption sites on the basal plane of Bi2Te3, negligible incubation in the ALD of ZnO on Bi2Te3 was found in the temperature range from 100 to 160 °C, and even the enhancement of the initial growth was observed at 200 °C. We demonstrate that a ZnTe interfacial layer was formed in the early growth stage by the interaction between diethylzinc and Bi2Te3, which improved the nucleation of ZnO on the basal plane of Bi2Te3. These results indicate that surface modification via the interaction between a precursor and layer-structured materials is an efficient way to achieve fluent and uniform nucleation on layer-structured materials such as Bi2Te3.",
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Enhancement of initial growth of ZnO films on layer-structured Bi2Te3 by atomic layer deposition. / Kim, Kwang Chon; Cho, Cheol Jin; Lee, Joohwi; Kim, Hyun Jae; Jeong, Doo Seok; Baek, Seung Hyub; Kim, Jin Sang; Kim, Seong Keun.

In: Chemistry of Materials, Vol. 26, No. 22, 25.11.2014, p. 6448-6453.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhancement of initial growth of ZnO films on layer-structured Bi2Te3 by atomic layer deposition

AU - Kim, Kwang Chon

AU - Cho, Cheol Jin

AU - Lee, Joohwi

AU - Kim, Hyun Jae

AU - Jeong, Doo Seok

AU - Baek, Seung Hyub

AU - Kim, Jin Sang

AU - Kim, Seong Keun

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AB - The initial growth behavior of ZnO films by atomic layer deposition (ALD) on layer-structured Bi2Te3 was investigated. Despite the lack of adsorption sites on the basal plane of Bi2Te3, negligible incubation in the ALD of ZnO on Bi2Te3 was found in the temperature range from 100 to 160 °C, and even the enhancement of the initial growth was observed at 200 °C. We demonstrate that a ZnTe interfacial layer was formed in the early growth stage by the interaction between diethylzinc and Bi2Te3, which improved the nucleation of ZnO on the basal plane of Bi2Te3. These results indicate that surface modification via the interaction between a precursor and layer-structured materials is an efficient way to achieve fluent and uniform nucleation on layer-structured materials such as Bi2Te3.

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