The second harmonic of the 787-nm output of a GaAlAs diode laser is generated in a LilO 3 crystal in an external ring enhancement cavity. The power of the second harmonic is measured for various geometric conditions of the ring cavity such as the focusing parameter, ξ, and the adjustment value of the cavity, δ. The optimum focusing parameter is experimentally determined to be ξ=1.5. A second harmonic power of 5.6 μW at 393.5 nm is obtained with an input fundamental power of 10 mW. The relative center frequency of the second harmonic is locked within 400 kHz to the resonance frequency of the ring cavity.
|Number of pages||5|
|Journal||Journal of the Korean Physical Society|
|State||Published - 1998 Dec 1|