Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

D. J. Lee, C. S. Park, Cheol Jin Lee, J. D. Song, H. C. Koo, Chong S. Yoon, Im Taek Yoon, H. S. Kim, T. W. Kang, Yoon Shon

Research output: Contribution to journalArticle

Abstract

The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase Tc (>300 K) by preventing MnO2. After milling 1-3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO2 and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO2 is considered to originate from the increased p-d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process.

Original languageEnglish
Pages (from-to)558-562
Number of pages5
JournalCurrent Applied Physics
Volume14
Issue number4
DOIs
StatePublished - 2014 Apr 1

Keywords

  • Increased T
  • MBE
  • p-type InP:Be/Mn/InP:Be triple layers

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