Emission enhancement of InGaN/GaN light emitting diode by using Ag nanoparticles

Kyoung Su Lee, Seon Pil Kim, Dong Uk Lee, Eun Kyu Kim

Research output: Contribution to journalArticle

1 Scopus citations


We have studied the effect of surface plasmon (SP) coupling to enhance emission efficiency of light emitting diode (LED) with multiple quantum wells (MQWs) structure by positioning Ag nanoparticles on the line-arrayed patterns. The line-arrayed patterns were fabricated by photolithography and inductively coupled plasma reactive ion etching process. The Ag nanoparticles were formed by thermal annealing at 300°C and 400°C for 30 min for Ag films with thickness of 10 nm and 15 nm deposited on the patterned LED structures, respectively. The photoluminescence (PL) emission intensity of line-patterned LED with Ag nanoparticles was overall enhanced. According to the spectra of time resolved PL, carrier life times of line-patterned LED with and without Ag nanoparticles appeared about 0.47 and 5.47 ns, respectively.

Original languageEnglish
Pages (from-to)7830-7834
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Issue number10
StatePublished - 2014 Jan 1


  • Ag nanoparticles
  • InGaN/GaN
  • Light emitting diode
  • Surface plasmon

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