Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba0.6Sr0.4TiO3 gate insulator

Young Bae Kim, Jeong Ung Kim, Duck-Kyun Choi, Jae Min Hong, Il Doo Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report on the fabrication of low-voltage ZnO thin-film transistors using 1% Ni-doped Ba0.6Sr0.4TiO3 as the gate insulator. The Ni-doped BST, deposited by RF magnetron sputtering at room temperature, significantly reduced leakage current density to less than 6∈×∈10-9 A/cm, as compared to a current density of 5∈×∈10-4 A/cm for undoped BST films at 0.5 MV/cm. The ZnO thin-film transistor with the Ni-doped BST gate insulator exhibited a very low operating voltage of 4 V. The field-effect mobility, the current on/off ratio and subthreshold swing were 2.2 cm2 V/s, 1. 2∈×∈106, and 0.21 V/dec respectively.

Original languageEnglish
Pages (from-to)76-79
Number of pages4
JournalJournal of Electroceramics
Volume23
Issue number1
DOIs
StatePublished - 2009 Aug 1

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Thin film transistors
Leakage currents
low voltage
leakage
Current density
transistors
insulators
current density
Electric potential
thin films
Magnetron sputtering
magnetron sputtering
Fabrication
fabrication
electric potential
room temperature
Temperature

Keywords

  • Gate insulator
  • Low voltage operation
  • Transistor
  • ZnO

Cite this

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title = "Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba0.6Sr0.4TiO3 gate insulator",
abstract = "We report on the fabrication of low-voltage ZnO thin-film transistors using 1{\%} Ni-doped Ba0.6Sr0.4TiO3 as the gate insulator. The Ni-doped BST, deposited by RF magnetron sputtering at room temperature, significantly reduced leakage current density to less than 6∈×∈10-9 A/cm, as compared to a current density of 5∈×∈10-4 A/cm for undoped BST films at 0.5 MV/cm. The ZnO thin-film transistor with the Ni-doped BST gate insulator exhibited a very low operating voltage of 4 V. The field-effect mobility, the current on/off ratio and subthreshold swing were 2.2 cm2 V/s, 1. 2∈×∈106, and 0.21 V/dec respectively.",
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Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba0.6Sr0.4TiO3 gate insulator. / Kim, Young Bae; Kim, Jeong Ung; Choi, Duck-Kyun; Hong, Jae Min; Kim, Il Doo.

In: Journal of Electroceramics, Vol. 23, No. 1, 01.08.2009, p. 76-79.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba0.6Sr0.4TiO3 gate insulator

AU - Kim, Young Bae

AU - Kim, Jeong Ung

AU - Choi, Duck-Kyun

AU - Hong, Jae Min

AU - Kim, Il Doo

PY - 2009/8/1

Y1 - 2009/8/1

N2 - We report on the fabrication of low-voltage ZnO thin-film transistors using 1% Ni-doped Ba0.6Sr0.4TiO3 as the gate insulator. The Ni-doped BST, deposited by RF magnetron sputtering at room temperature, significantly reduced leakage current density to less than 6∈×∈10-9 A/cm, as compared to a current density of 5∈×∈10-4 A/cm for undoped BST films at 0.5 MV/cm. The ZnO thin-film transistor with the Ni-doped BST gate insulator exhibited a very low operating voltage of 4 V. The field-effect mobility, the current on/off ratio and subthreshold swing were 2.2 cm2 V/s, 1. 2∈×∈106, and 0.21 V/dec respectively.

AB - We report on the fabrication of low-voltage ZnO thin-film transistors using 1% Ni-doped Ba0.6Sr0.4TiO3 as the gate insulator. The Ni-doped BST, deposited by RF magnetron sputtering at room temperature, significantly reduced leakage current density to less than 6∈×∈10-9 A/cm, as compared to a current density of 5∈×∈10-4 A/cm for undoped BST films at 0.5 MV/cm. The ZnO thin-film transistor with the Ni-doped BST gate insulator exhibited a very low operating voltage of 4 V. The field-effect mobility, the current on/off ratio and subthreshold swing were 2.2 cm2 V/s, 1. 2∈×∈106, and 0.21 V/dec respectively.

KW - Gate insulator

KW - Low voltage operation

KW - Transistor

KW - ZnO

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