Electrical Transport Studies of the Two‐Dimensional Electron Gas at InxGa1−xAs/InP Heterointerfaces Grown by MOCVD

Taewhan Kim, Y. Seo

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)K27-K30
Journalphysica status solidi (a)
Volume132
Issue number1
DOIs
StatePublished - 1992 Jan 1

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Two dimensional electron gas
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
electron gas

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title = "Electrical Transport Studies of the Two‐Dimensional Electron Gas at InxGa1−xAs/InP Heterointerfaces Grown by MOCVD",
author = "Taewhan Kim and Y. Seo",
year = "1992",
month = "1",
day = "1",
doi = "10.1002/pssa.2211320131",
language = "English",
volume = "132",
pages = "K27--K30",
journal = "Physica Status Solidi (A) Applied Research",
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Electrical Transport Studies of the Two‐Dimensional Electron Gas at InxGa1−xAs/InP Heterointerfaces Grown by MOCVD. / Kim, Taewhan; Seo, Y.

In: physica status solidi (a), Vol. 132, No. 1, 01.01.1992, p. K27-K30.

Research output: Contribution to journalArticle

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AU - Kim, Taewhan

AU - Seo, Y.

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JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

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