Electrical properties of Zn(Mn,Co)O films grown by pulsed laser deposition method

Jae-Hoon Kim, Hooyoung Song, Eun Kyu Kim, Sejoon Lee, Yoon Shon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

High quality ZnO films were made by using a pulsed laser deposition (PLD) system. Through a same method magnetic element doped Zn(Mn,Co)O films were grown. An XRD measurement was tried and the result showed a single crystal of wurtzite structure. A capacitance-voltage measurement showed that the ZnMnO has electrical properties of an n-type semiconductor, and carrier concentration is 5 × 1018 cm-3. From a deep level transient spectroscopy (DLTS) measurement, an oxygen vacancy and a Mn-related electron trap in the ZnMnO film were appeared as Ec-0.62 eV and E c-0.13 eV, respectively. The electrical measurement of the ZnCoO films showed meaningless results because of its high conductance.

Original languageEnglish
Title of host publicationECS Transactions - ZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors
Pages27-31
Number of pages5
Volume16
Edition12
DOIs
StatePublished - 2008 Dec 1
EventZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 122008 Oct 17

Other

OtherZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1208/10/17

Fingerprint

Pulsed laser deposition
Electric properties
Electron traps
Deep level transient spectroscopy
Capacitance measurement
Voltage measurement
Oxygen vacancies
Carrier concentration
Single crystals
Semiconductor materials

Cite this

Kim, J-H., Song, H., Kim, E. K., Lee, S., & Shon, Y. (2008). Electrical properties of Zn(Mn,Co)O films grown by pulsed laser deposition method. In ECS Transactions - ZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors (12 ed., Vol. 16, pp. 27-31) https://doi.org/10.1149/1.2985840
Kim, Jae-Hoon ; Song, Hooyoung ; Kim, Eun Kyu ; Lee, Sejoon ; Shon, Yoon. / Electrical properties of Zn(Mn,Co)O films grown by pulsed laser deposition method. ECS Transactions - ZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors. Vol. 16 12. ed. 2008. pp. 27-31
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abstract = "High quality ZnO films were made by using a pulsed laser deposition (PLD) system. Through a same method magnetic element doped Zn(Mn,Co)O films were grown. An XRD measurement was tried and the result showed a single crystal of wurtzite structure. A capacitance-voltage measurement showed that the ZnMnO has electrical properties of an n-type semiconductor, and carrier concentration is 5 × 1018 cm-3. From a deep level transient spectroscopy (DLTS) measurement, an oxygen vacancy and a Mn-related electron trap in the ZnMnO film were appeared as Ec-0.62 eV and E c-0.13 eV, respectively. The electrical measurement of the ZnCoO films showed meaningless results because of its high conductance.",
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Kim, J-H, Song, H, Kim, EK, Lee, S & Shon, Y 2008, Electrical properties of Zn(Mn,Co)O films grown by pulsed laser deposition method. in ECS Transactions - ZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors. 12 edn, vol. 16, pp. 27-31, ZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors - 214th ECS Meeting, Honolulu, HI, United States, 08/10/12. https://doi.org/10.1149/1.2985840

Electrical properties of Zn(Mn,Co)O films grown by pulsed laser deposition method. / Kim, Jae-Hoon; Song, Hooyoung; Kim, Eun Kyu; Lee, Sejoon; Shon, Yoon.

ECS Transactions - ZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors. Vol. 16 12. ed. 2008. p. 27-31.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Electrical properties of Zn(Mn,Co)O films grown by pulsed laser deposition method

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N2 - High quality ZnO films were made by using a pulsed laser deposition (PLD) system. Through a same method magnetic element doped Zn(Mn,Co)O films were grown. An XRD measurement was tried and the result showed a single crystal of wurtzite structure. A capacitance-voltage measurement showed that the ZnMnO has electrical properties of an n-type semiconductor, and carrier concentration is 5 × 1018 cm-3. From a deep level transient spectroscopy (DLTS) measurement, an oxygen vacancy and a Mn-related electron trap in the ZnMnO film were appeared as Ec-0.62 eV and E c-0.13 eV, respectively. The electrical measurement of the ZnCoO films showed meaningless results because of its high conductance.

AB - High quality ZnO films were made by using a pulsed laser deposition (PLD) system. Through a same method magnetic element doped Zn(Mn,Co)O films were grown. An XRD measurement was tried and the result showed a single crystal of wurtzite structure. A capacitance-voltage measurement showed that the ZnMnO has electrical properties of an n-type semiconductor, and carrier concentration is 5 × 1018 cm-3. From a deep level transient spectroscopy (DLTS) measurement, an oxygen vacancy and a Mn-related electron trap in the ZnMnO film were appeared as Ec-0.62 eV and E c-0.13 eV, respectively. The electrical measurement of the ZnCoO films showed meaningless results because of its high conductance.

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Kim J-H, Song H, Kim EK, Lee S, Shon Y. Electrical properties of Zn(Mn,Co)O films grown by pulsed laser deposition method. In ECS Transactions - ZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors. 12 ed. Vol. 16. 2008. p. 27-31 https://doi.org/10.1149/1.2985840