Electrical properties of vertically stacked InGaAs/lnGaAsP/lnP self-assembled quantum dots

Eun Kyu Kim, Jin Soak Kim, W. G. Jeong, Il Woo Park

Research output: Contribution to journalArticle

Abstract

We used capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) methods to investigate dependence of the electrical properties of the vertically stacked InGaAs/InGaAsP/InP quantum dot (QD) system on the vertical distance between the InAs QD layers. The DLTS measurements show that two groups of activation energies, 0.33 ∼ 0.37 eV and 0.39 ∼ 0.43 eV for low and high temperatures, respectively, appear in QD samples and vary with the thickness of the InGaAaP spacer layer. Also, the activation energy of the 100-nm-thick spacer samples has a lower value than that of the thin-spacer (10 nm) sample. From the bias-dependent DLTS measurements for the 10-nm-spacer sample, the quantum energy states of nearby QDs appear to couple and decouple as the gate bias conditions vary.

Original languageEnglish
Pages (from-to)857-860
Number of pages4
JournalJournal of the Korean Physical Society
Volume47
Issue number5
StatePublished - 2005 Nov 1

Fingerprint

spacers
electrical properties
quantum dots
spectroscopy
activation energy
capacitance
electric potential
energy

Keywords

  • Deep-level transient spectroscopy
  • Energy level
  • InGaAs/ InGaAsP/InP
  • Quantum dots
  • Vertical stacking

Cite this

@article{dc4551b627b945218d43d51447a66655,
title = "Electrical properties of vertically stacked InGaAs/lnGaAsP/lnP self-assembled quantum dots",
abstract = "We used capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) methods to investigate dependence of the electrical properties of the vertically stacked InGaAs/InGaAsP/InP quantum dot (QD) system on the vertical distance between the InAs QD layers. The DLTS measurements show that two groups of activation energies, 0.33 ∼ 0.37 eV and 0.39 ∼ 0.43 eV for low and high temperatures, respectively, appear in QD samples and vary with the thickness of the InGaAaP spacer layer. Also, the activation energy of the 100-nm-thick spacer samples has a lower value than that of the thin-spacer (10 nm) sample. From the bias-dependent DLTS measurements for the 10-nm-spacer sample, the quantum energy states of nearby QDs appear to couple and decouple as the gate bias conditions vary.",
keywords = "Deep-level transient spectroscopy, Energy level, InGaAs/ InGaAsP/InP, Quantum dots, Vertical stacking",
author = "Kim, {Eun Kyu} and Kim, {Jin Soak} and Jeong, {W. G.} and Park, {Il Woo}",
year = "2005",
month = "11",
day = "1",
language = "English",
volume = "47",
pages = "857--860",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
number = "5",

}

Electrical properties of vertically stacked InGaAs/lnGaAsP/lnP self-assembled quantum dots. / Kim, Eun Kyu; Kim, Jin Soak; Jeong, W. G.; Park, Il Woo.

In: Journal of the Korean Physical Society, Vol. 47, No. 5, 01.11.2005, p. 857-860.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical properties of vertically stacked InGaAs/lnGaAsP/lnP self-assembled quantum dots

AU - Kim, Eun Kyu

AU - Kim, Jin Soak

AU - Jeong, W. G.

AU - Park, Il Woo

PY - 2005/11/1

Y1 - 2005/11/1

N2 - We used capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) methods to investigate dependence of the electrical properties of the vertically stacked InGaAs/InGaAsP/InP quantum dot (QD) system on the vertical distance between the InAs QD layers. The DLTS measurements show that two groups of activation energies, 0.33 ∼ 0.37 eV and 0.39 ∼ 0.43 eV for low and high temperatures, respectively, appear in QD samples and vary with the thickness of the InGaAaP spacer layer. Also, the activation energy of the 100-nm-thick spacer samples has a lower value than that of the thin-spacer (10 nm) sample. From the bias-dependent DLTS measurements for the 10-nm-spacer sample, the quantum energy states of nearby QDs appear to couple and decouple as the gate bias conditions vary.

AB - We used capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) methods to investigate dependence of the electrical properties of the vertically stacked InGaAs/InGaAsP/InP quantum dot (QD) system on the vertical distance between the InAs QD layers. The DLTS measurements show that two groups of activation energies, 0.33 ∼ 0.37 eV and 0.39 ∼ 0.43 eV for low and high temperatures, respectively, appear in QD samples and vary with the thickness of the InGaAaP spacer layer. Also, the activation energy of the 100-nm-thick spacer samples has a lower value than that of the thin-spacer (10 nm) sample. From the bias-dependent DLTS measurements for the 10-nm-spacer sample, the quantum energy states of nearby QDs appear to couple and decouple as the gate bias conditions vary.

KW - Deep-level transient spectroscopy

KW - Energy level

KW - InGaAs/ InGaAsP/InP

KW - Quantum dots

KW - Vertical stacking

UR - http://www.scopus.com/inward/record.url?scp=28744448717&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:28744448717

VL - 47

SP - 857

EP - 860

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 5

ER -