Electrical properties of MOSFETs with N2O-nitrided LPCVD SiO2 gate dielectrics

J. Ahn, G. Q. Lo, D. L. Kwong

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

In this paper, the electrical properties of MOSFETs with LPCVD SiO2 nitrided in N2O ambient have been studied and compared to those with control thermal gate oxide N2O-nitridation of CVD oxides combines the advantages of interfacial oxynitride growth and defect-less nature of CVD oxides. As a result, devices with N2O-nitrided CVD oxide show enhanced performance, improved reliability, and better TDDB property (tBD).

Original languageEnglish
Pages530-532
Number of pages3
DOIs
StatePublished - 1992
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/08/2692/08/28

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