Electrical properties of delta-doped silicon-nanowire field-effect transistors

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Abstract

We report on complementary delta-doping (δ-doping) and the electrical transport properties in single-crystal silicon nanowires (SiNWs) synthesized by using chemical vapor deposition via a vapor-liquid-solid growth process. Self-limited δ-doping layers were formed on intrinsic SiNW surfaces with either phosphine (PH3) or diborane (B2H6) molecular precursors and were then capped with intrinsic Si shell layers. Gate-dependent transport measurements showed that these δ-doped SiNWs behaved as either p-type or n-type channels in field-effect transistors (FETs) with transconductances of 150 nS and 130 nS and carrier mobilities of 45 cm 2/Vs and 40 cm2/Vs for p-type and n-type SiNW FETs, respectively.

Original languageEnglish
Pages (from-to)L1759-L1763
JournalJournal of the Korean Physical Society
Volume53
Issue number4
DOIs
StatePublished - 2008 Oct

Keywords

  • Delta-doping
  • Field-effect transistors
  • Silicon nanowires

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