Electrical properties of 10-nm-radius n-type gate all around twin Si nanowire field effect transistors

S. H. Jang, J. T. Ryu, J. H. You, Taewhan Kim

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The electrical properties of 10-nm-radius n-type gate all around (GAA) twin Si nanowire ?eld effect transistors (TSNWFETs) and ?eld effect transistors (FETs) without nanowires were investigated to understand their device characteristics. The electrical characteristics of the GAA TSNWFETs and FETs with bulk boron concentrations of 1 × 10 18 and 1 × 10 16 cm -3 were simulated by using threedimensional technology computer-aided design simulation tools of sentaurus taking into account quantum effects. The simulation results showed that the on-current level of the TSNWFETs was larger than that of FETs, and the subthreshold swing and the drain induced barrier lowing of the TSNWFETs were smaller than those of FETs. The current density and conduction band edge pro?les in the TSNWFETs clari?ed the dominant current paths. The simulation results showed that the on-current/off-current ratio increased with increasing bulk boron concentration, and the stand-by current level decreased.

Original languageEnglish
Pages (from-to)5839-5842
Number of pages4
JournalJournal of nanoscience and nanotechnology
Volume12
Issue number7
DOIs
StatePublished - 2012 Jul 1

Keywords

  • Drain Induced Barrier Lowing
  • Electrical Property
  • Potential Pro?le
  • Quantum Effects
  • Si Nanowire Field Effect Transistor

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