Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode

Changhwan Choi, T. S. Jeon, R. Clark, D. L. Kwong

Research output: Contribution to journalLetter

75 Citations (Scopus)

Abstract

High-quality, ultrathin chemical vapor deposition (CVD) hafnium oxynitride (HfOxNy) gate dielectric with poly-silicon (Si) gate electrode has been investigated for the first time. This CVD HfOxNy gate dielectric film remains amorphous after 950°C N2 annealing. Compared with HfO2 films with poly-Si gate electrode and similar equivalent oxide thickness (EOT), CVD HfOxNy shows significantly reduction in leakage-current density and boron penetration and superior thermal and electrical stability.

Original languageEnglish
Pages (from-to)215-217
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number4
DOIs
StatePublished - 2003 Apr 1

Fingerprint

Gate dielectrics
Silicon
Chemical vapor deposition
Electric properties
Thermodynamic stability
Electrodes
Hafnium
Boron
Dielectric films
Leakage currents
Oxides
Current density
Annealing

Keywords

  • Boron penetration
  • Chemical vapor deposition (CVD)
  • Hafnium oxide
  • Hafnium oxynitride
  • Thermal stability

Cite this

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abstract = "High-quality, ultrathin chemical vapor deposition (CVD) hafnium oxynitride (HfOxNy) gate dielectric with poly-silicon (Si) gate electrode has been investigated for the first time. This CVD HfOxNy gate dielectric film remains amorphous after 950°C N2 annealing. Compared with HfO2 films with poly-Si gate electrode and similar equivalent oxide thickness (EOT), CVD HfOxNy shows significantly reduction in leakage-current density and boron penetration and superior thermal and electrical stability.",
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Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode. / Choi, Changhwan; Jeon, T. S.; Clark, R.; Kwong, D. L.

In: IEEE Electron Device Letters, Vol. 24, No. 4, 01.04.2003, p. 215-217.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode

AU - Choi, Changhwan

AU - Jeon, T. S.

AU - Clark, R.

AU - Kwong, D. L.

PY - 2003/4/1

Y1 - 2003/4/1

N2 - High-quality, ultrathin chemical vapor deposition (CVD) hafnium oxynitride (HfOxNy) gate dielectric with poly-silicon (Si) gate electrode has been investigated for the first time. This CVD HfOxNy gate dielectric film remains amorphous after 950°C N2 annealing. Compared with HfO2 films with poly-Si gate electrode and similar equivalent oxide thickness (EOT), CVD HfOxNy shows significantly reduction in leakage-current density and boron penetration and superior thermal and electrical stability.

AB - High-quality, ultrathin chemical vapor deposition (CVD) hafnium oxynitride (HfOxNy) gate dielectric with poly-silicon (Si) gate electrode has been investigated for the first time. This CVD HfOxNy gate dielectric film remains amorphous after 950°C N2 annealing. Compared with HfO2 films with poly-Si gate electrode and similar equivalent oxide thickness (EOT), CVD HfOxNy shows significantly reduction in leakage-current density and boron penetration and superior thermal and electrical stability.

KW - Boron penetration

KW - Chemical vapor deposition (CVD)

KW - Hafnium oxide

KW - Hafnium oxynitride

KW - Thermal stability

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U2 - 10.1109/LED.2003.810881

DO - 10.1109/LED.2003.810881

M3 - Letter

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SP - 215

EP - 217

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

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