Electrical characteristics and operating mechanisms of nonvolatile memory devices fabricated utilizing core-shell CuInS2-ZnS quantum dots embedded in a poly(methyl methacrylate) layer

Kyu Wan Han, Min Ho Lee, Taewhan Kim, Dong Yeol Yun, Sung Woo Kim, Sang Wook Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Nonvolatile memory devices were fabricated with core-shell CuInS 2-ZnS quantum dots (QDs) embedded in poly(methyl methacrylate) (PMMA). Capacitance-voltage (C-V) measurements at 300 K on the Al/CuInS 2-ZnS QDs embedded in PMMA layer/p-Si device showed capacitance hysteresis behaviors with a flatband voltage shift. The memory window of the device increased with increasing applied sweep voltage and saturated at high electric fields due to the current leakage. Capacitance-time measurements showed that the retention time was larger than 1 × 105s that was more than 10 years. The operating mechanisms for the devices are described on the basis of the C-V curves.

Original languageEnglish
Article number193302
JournalApplied Physics Letters
Volume99
Issue number19
DOIs
StatePublished - 2011 Nov 7

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polymethyl methacrylate
capacitance
quantum dots
electric potential
electrical measurement
leakage
hysteresis
time measurement
electric fields
shift
curves

Cite this

@article{e78680f14d9241c5a953f6d24098f708,
title = "Electrical characteristics and operating mechanisms of nonvolatile memory devices fabricated utilizing core-shell CuInS2-ZnS quantum dots embedded in a poly(methyl methacrylate) layer",
abstract = "Nonvolatile memory devices were fabricated with core-shell CuInS 2-ZnS quantum dots (QDs) embedded in poly(methyl methacrylate) (PMMA). Capacitance-voltage (C-V) measurements at 300 K on the Al/CuInS 2-ZnS QDs embedded in PMMA layer/p-Si device showed capacitance hysteresis behaviors with a flatband voltage shift. The memory window of the device increased with increasing applied sweep voltage and saturated at high electric fields due to the current leakage. Capacitance-time measurements showed that the retention time was larger than 1 × 105s that was more than 10 years. The operating mechanisms for the devices are described on the basis of the C-V curves.",
author = "{Wan Han}, Kyu and {Ho Lee}, Min and Taewhan Kim and {Yeol Yun}, Dong and {Woo Kim}, Sung and {Wook Kim}, Sang",
year = "2011",
month = "11",
day = "7",
doi = "10.1063/1.3659473",
language = "English",
volume = "99",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "19",

}

Electrical characteristics and operating mechanisms of nonvolatile memory devices fabricated utilizing core-shell CuInS2-ZnS quantum dots embedded in a poly(methyl methacrylate) layer. / Wan Han, Kyu; Ho Lee, Min; Kim, Taewhan; Yeol Yun, Dong; Woo Kim, Sung; Wook Kim, Sang.

In: Applied Physics Letters, Vol. 99, No. 19, 193302, 07.11.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical characteristics and operating mechanisms of nonvolatile memory devices fabricated utilizing core-shell CuInS2-ZnS quantum dots embedded in a poly(methyl methacrylate) layer

AU - Wan Han, Kyu

AU - Ho Lee, Min

AU - Kim, Taewhan

AU - Yeol Yun, Dong

AU - Woo Kim, Sung

AU - Wook Kim, Sang

PY - 2011/11/7

Y1 - 2011/11/7

N2 - Nonvolatile memory devices were fabricated with core-shell CuInS 2-ZnS quantum dots (QDs) embedded in poly(methyl methacrylate) (PMMA). Capacitance-voltage (C-V) measurements at 300 K on the Al/CuInS 2-ZnS QDs embedded in PMMA layer/p-Si device showed capacitance hysteresis behaviors with a flatband voltage shift. The memory window of the device increased with increasing applied sweep voltage and saturated at high electric fields due to the current leakage. Capacitance-time measurements showed that the retention time was larger than 1 × 105s that was more than 10 years. The operating mechanisms for the devices are described on the basis of the C-V curves.

AB - Nonvolatile memory devices were fabricated with core-shell CuInS 2-ZnS quantum dots (QDs) embedded in poly(methyl methacrylate) (PMMA). Capacitance-voltage (C-V) measurements at 300 K on the Al/CuInS 2-ZnS QDs embedded in PMMA layer/p-Si device showed capacitance hysteresis behaviors with a flatband voltage shift. The memory window of the device increased with increasing applied sweep voltage and saturated at high electric fields due to the current leakage. Capacitance-time measurements showed that the retention time was larger than 1 × 105s that was more than 10 years. The operating mechanisms for the devices are described on the basis of the C-V curves.

UR - http://www.scopus.com/inward/record.url?scp=81155145946&partnerID=8YFLogxK

U2 - 10.1063/1.3659473

DO - 10.1063/1.3659473

M3 - Article

AN - SCOPUS:81155145946

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

M1 - 193302

ER -