Electrical and optical properties of PbTiO3 thin films on p-Si grown by metalorganic chemical vapor deposition at low temperature

Y. S. Yoon, W. N. Kang, S. S. Yom, T. W. Kim, M. Jung, H. J. Kim, T. H. Park, H. K. Na

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Abstract

Metalorganic chemical vapor deposition of PbTiO3 using Pb (tmhd)2, Ti(OC3H7)4, and N 2O via thermal pyrolysis at relatively low temperature (∼500°C) was performed in order to produce PbTiO3 insulator gates with high quality PbTiO3/p-Si interfaces. Raman spectroscopy showed the several optical phonon modes of the PbTiO3/p-Si structure. The stoichiometry of the PbTiO3 films was observed by Auger electron spectroscopy. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with a PbTiO3 insulator gate, and the interface state densities at the PbTiO3/p-Si were approximately 1011 eV-1 cm-2 at the middle of the Si energy gap.

Original languageEnglish
Pages (from-to)1104-1106
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number8
DOIs
StatePublished - 1993 Dec 1

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