Electric subband studies in an In0.53Ga0.47As/InP one-side-modulation-doped quantum well

T. W. Kim, K. H. Yoo, G. Ihm, S. K. Noh, K. S. Lee

Research output: Contribution to journalArticlepeer-review

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Shubnikov-de Haas and Van der Pauw Hall-effect measurements on In0.53Ga0.47As/InP one-side-modulation-doped quantum wells grown by metalorganic chemical vapor deposition have been carried out to investigate the magnetotransport properties of an electron gas and to determine the subband energies and wave functions in a single quantum well. The Shubnikov-de Haas measurements have demonstrated the existence of a two dimensional electron gas in the In0.53Ga0.47As potential well. The electric subband energies, energy wavefunctions, and subband carrier densities were determined using the experimental results and a self-consistent method by taking into account the exchange-correlation effects.

Original languageEnglish
Pages (from-to)1137-1139
Number of pages3
JournalSolid State Communications
Issue number12
StatePublished - 1992 Dec


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