Effects of the O2/Ar gas flow ratio on the electrical and transmittance properties of ZnO:Al films deposited by RF magnetron sputtering

Keunbin Yim, Hyoun Woo Kim, Chongmu Lee

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

ZnO:Al thin films for transparent conductors were deposited on sapphire (0001) substrates by using an RF magnetron sputtering technique. Effects of the O2/Ar flow ratio in the sputtering process on the crystallinity, carrier concentration, carrier mobility, and transmittance of the films were investigated. The FWHM of the (002) XRD intensity peak is minimal at the O 2/Ar flow ratio of 0.5. According to the Hall measurement results the carrier concentration and mobility of the film decrease and thus the resistivity increases as the O2/Ar flow ratio increases. The transmittance of the ZnO:Al film deposited on the glass substrate is characteristic of standing wave. The transmittance increases as the O 2/Ar flow ratio in-RF magnetron sputtering increases up to 0.5. Considering the effects of the the O2/Ar flow ratio on the electrical resistivity and transmittance of the ZnO:Al film the optimum O2/Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

Original languageEnglish
Pages (from-to)875-877
Number of pages3
JournalJournal of Electroceramics
Volume17
Issue number2-4
DOIs
StatePublished - 2006 Dec 1

Fingerprint

Magnetron sputtering
gas flow
Flow of gases
transmittance
magnetron sputtering
electrical properties
Carrier mobility
Carrier concentration
Sputter deposition
Aluminum Oxide
Substrates
Full width at half maximum
electrical resistivity
Sapphire
Sputtering
carrier mobility
standing waves
crystallinity
sapphire
conductors

Keywords

  • Al doping
  • O/Ar gas flow ratio
  • RF-magnetron sputtering
  • Transparent conductor
  • ZnO:Al

Cite this

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abstract = "ZnO:Al thin films for transparent conductors were deposited on sapphire (0001) substrates by using an RF magnetron sputtering technique. Effects of the O2/Ar flow ratio in the sputtering process on the crystallinity, carrier concentration, carrier mobility, and transmittance of the films were investigated. The FWHM of the (002) XRD intensity peak is minimal at the O 2/Ar flow ratio of 0.5. According to the Hall measurement results the carrier concentration and mobility of the film decrease and thus the resistivity increases as the O2/Ar flow ratio increases. The transmittance of the ZnO:Al film deposited on the glass substrate is characteristic of standing wave. The transmittance increases as the O 2/Ar flow ratio in-RF magnetron sputtering increases up to 0.5. Considering the effects of the the O2/Ar flow ratio on the electrical resistivity and transmittance of the ZnO:Al film the optimum O2/Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.",
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Effects of the O2/Ar gas flow ratio on the electrical and transmittance properties of ZnO:Al films deposited by RF magnetron sputtering. / Yim, Keunbin; Kim, Hyoun Woo; Lee, Chongmu.

In: Journal of Electroceramics, Vol. 17, No. 2-4, 01.12.2006, p. 875-877.

Research output: Contribution to journalArticle

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N2 - ZnO:Al thin films for transparent conductors were deposited on sapphire (0001) substrates by using an RF magnetron sputtering technique. Effects of the O2/Ar flow ratio in the sputtering process on the crystallinity, carrier concentration, carrier mobility, and transmittance of the films were investigated. The FWHM of the (002) XRD intensity peak is minimal at the O 2/Ar flow ratio of 0.5. According to the Hall measurement results the carrier concentration and mobility of the film decrease and thus the resistivity increases as the O2/Ar flow ratio increases. The transmittance of the ZnO:Al film deposited on the glass substrate is characteristic of standing wave. The transmittance increases as the O 2/Ar flow ratio in-RF magnetron sputtering increases up to 0.5. Considering the effects of the the O2/Ar flow ratio on the electrical resistivity and transmittance of the ZnO:Al film the optimum O2/Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

AB - ZnO:Al thin films for transparent conductors were deposited on sapphire (0001) substrates by using an RF magnetron sputtering technique. Effects of the O2/Ar flow ratio in the sputtering process on the crystallinity, carrier concentration, carrier mobility, and transmittance of the films were investigated. The FWHM of the (002) XRD intensity peak is minimal at the O 2/Ar flow ratio of 0.5. According to the Hall measurement results the carrier concentration and mobility of the film decrease and thus the resistivity increases as the O2/Ar flow ratio increases. The transmittance of the ZnO:Al film deposited on the glass substrate is characteristic of standing wave. The transmittance increases as the O 2/Ar flow ratio in-RF magnetron sputtering increases up to 0.5. Considering the effects of the the O2/Ar flow ratio on the electrical resistivity and transmittance of the ZnO:Al film the optimum O2/Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

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