Effects of SF6 addition to O2 plasma on polyimide etching in ECR plasma etcher

Sang Hoon Kim, Hosung Moon, Jinho Ahn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of SF6 addition in O2 plasma on the etching characteristics of polyimide-one of the promising low-k interlayer dielectrics-has been studied. Plasma etching of polyimide with an O2/SF6 mixture gas is desirable due to the improved etch topography and lowered dielectric constant in spite of reduced etch rate and etching selectivity to SiO2 hard mask.

Original languageEnglish
Title of host publicationDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages214-215
Number of pages2
ISBN (Electronic)4891140046, 9784891140045
DOIs
StatePublished - 2000 Jan 1
EventInternational Microprocesses and Nanotechnology Conference, MNC 2000 - Tokyo, Japan
Duration: 2000 Jul 112000 Jul 13

Publication series

NameDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2000
CountryJapan
CityTokyo
Period00/07/1100/07/13

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    Kim, S. H., Moon, H., & Ahn, J. (2000). Effects of SF6 addition to O2 plasma on polyimide etching in ECR plasma etcher. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000 (pp. 214-215). [872718] (Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2000.872718