Effects of N 2 remote plasma nitridation on the structural and electrical characteristics of the HfO 2 gate dielectrics grown using remote plasma atomic layer deposition methods

Jihoon Choi, Seokhoon Kim, Jinwoo Kim, Hyunseok Kang, Hyeongtag Jeon, Choelhwyi Bae

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The characteristics of remote plasma atomic layer deposited Hf O2 on Si, which has a very thin Si O2 interlayer with and without remote plasma nitridation (RPN), have been investigated. Small amounts of N atoms were successfully incorporated by RPN pretreatment, in which the dominant emission species were excited atomic nitrogen (N*) and excited molecular nitrogen (N2*), into a very thin Si O2 interlayer for the growth of Hf O2 thin film. The thin (∼1.5 nm) intermediate layer containing nitrogen, which was prepared by sequential O2 and N2 remote plasma treatment of the Si substrate, can effectively suppress growth of the unintentional interface layer. In addition, it enhances the thermal stability and the resistance to oxygen diffusion during rapid thermal annealing. The Hf O2 film containing the remote plasma nitrided Si O2 interlayer annealed at 800 °C showed a lower equivalent oxide thickness of ∼1.89 nm and a lower leakage current density (3.78× 10-7 A cm-2 at ∫ VG - VFB ∫ =2 V) compared to a non-nitrided sample of the same physical thickness. Also, we compared the characteristics of Hf O2 films annealed in two different ambient environments, N2 and O2.

Original languageEnglish
Article number075604JVA
Pages (from-to)900-907
Number of pages8
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume24
Issue number4
DOIs
StatePublished - 2006 Jul 1

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Plasma deposition
Nitridation
Atomic layer deposition
Gate dielectrics
atomic layer epitaxy
Plasmas
interlayers
Nitrogen
nitrogen
Rapid thermal annealing
Leakage currents
pretreatment
Oxides
Thermodynamic stability
leakage
thermal stability
Current density
current density
Oxygen
Thin films

Cite this

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title = "Effects of N 2 remote plasma nitridation on the structural and electrical characteristics of the HfO 2 gate dielectrics grown using remote plasma atomic layer deposition methods",
abstract = "The characteristics of remote plasma atomic layer deposited Hf O2 on Si, which has a very thin Si O2 interlayer with and without remote plasma nitridation (RPN), have been investigated. Small amounts of N atoms were successfully incorporated by RPN pretreatment, in which the dominant emission species were excited atomic nitrogen (N*) and excited molecular nitrogen (N2*), into a very thin Si O2 interlayer for the growth of Hf O2 thin film. The thin (∼1.5 nm) intermediate layer containing nitrogen, which was prepared by sequential O2 and N2 remote plasma treatment of the Si substrate, can effectively suppress growth of the unintentional interface layer. In addition, it enhances the thermal stability and the resistance to oxygen diffusion during rapid thermal annealing. The Hf O2 film containing the remote plasma nitrided Si O2 interlayer annealed at 800 °C showed a lower equivalent oxide thickness of ∼1.89 nm and a lower leakage current density (3.78× 10-7 A cm-2 at ∫ VG - VFB ∫ =2 V) compared to a non-nitrided sample of the same physical thickness. Also, we compared the characteristics of Hf O2 films annealed in two different ambient environments, N2 and O2.",
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Effects of N 2 remote plasma nitridation on the structural and electrical characteristics of the HfO 2 gate dielectrics grown using remote plasma atomic layer deposition methods. / Choi, Jihoon; Kim, Seokhoon; Kim, Jinwoo; Kang, Hyunseok; Jeon, Hyeongtag; Bae, Choelhwyi.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 24, No. 4, 075604JVA, 01.07.2006, p. 900-907.

Research output: Contribution to journalArticle

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AU - Choi, Jihoon

AU - Kim, Seokhoon

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AU - Kang, Hyunseok

AU - Jeon, Hyeongtag

AU - Bae, Choelhwyi

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