Effects of interfacial layer-by-layer nanolayers on the stability of the Cu TSV: Diffusion barrier, adhesion, conformal coating, and mechanical property

Daekyun Jeong, Rahim Abdur, Young Chang Joo, Jae il Jang, Pil Ryung Cha, Jiyoung Kim, Kyeong Sik Min, Jaegab Lee

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The Through-Silicon (Si) Via (TSV) is the integration technology for three-dimensional integrated-circuit packaging. The layer-by-layer (LbL) technique has been used to deposit flexible poly(allylamine) hydrochloride (PAH)/polystyrene sulfonate (PSS) multilayers inside scalloped Si trenches of a high aspect ratio, fabricated by the Bosch-etching process. An outstanding control of the thickness and the conformality of the polymer layers, along with a significantly improved planarization, was achieved due to the LbL-technique self-termination effects. In addition, the basic properties of the polymer layers have been characterized: diffusion-barrier properties, adhesion, density, and elastic modulus. The results of this study demonstrate the feasibility of LbL multilayers regarding the TSV liner for the vertical interconnect accesses with a high aspect ratio of highly scalloped surface walls.

Original languageEnglish
Pages (from-to)33-41
Number of pages9
JournalMaterials Science in Semiconductor Processing
Volume83
DOIs
StatePublished - 2018 Aug 15

Keywords

  • Conformal coating
  • Layer-by-layer (LbL)
  • Nano indentation
  • Poly(allylamine) hydrochloride (PAH)/polystyrene sulfonate (PSS)
  • Stress reduction
  • Through-Silicon Via (TSV)

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