Effects of electric fields on the silver photodoping of As2Se3 films

T. W. Kang, C. Y. Hong, C. S. Chong, T. W. Kim

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The effects of different electric fields (4.2, 8.3, 12.5, 16.7 and 20.8 Vcm-1) on the sheet resistance, Rs, and optical band gap, Eobg, of As2Se3 samples (1×105nm) that were photodoped by Ag (5×103nm) have been studied. The Rs and Eobg of samples subjected to an electric field of 12.5 Vcm-1 decrease linearly to a distance of 5 mm from both electrodes, and then saturate at larger distances. This result suggests that there is a critical value of the electric field which affects photodoping. The dependence of Rs and Eobg on the distance from the electrodes shows similar profiles for these electrodes.

Original languageEnglish
Pages (from-to)5620-5622
Number of pages3
JournalJournal of Materials Science
Volume27
Issue number20
DOIs
StatePublished - 1992 Jan
Externally publishedYes

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