Effect of trap profile on device characteristics of metal-oxide- semiconductor field effect transistors with hafnium-based dielectrics

Tae Young Jang, Tea Wan Kim, Dong Hyoub Kim, Jung Woo Kim, Jae Kyeong Jeong, Rino Choi

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The trap properties and performance of metal-oxide-semiconductor field effect transistors (MOSFETs) with either a HfSiO or HfO2 dielectric were determined using single-pulse Id-Vg and charge pumping measurements. The HfSiO dielectric shows a lower bulk trap density and a lower interface trap density than the HfO2 dielectric. Particularly, the trap depth profile as a function of distance from the Si/SiOx interface, which is obtained using frequency-dependent charge pumping measurements, shows a marked reduction in trap density in the HfSiO dielectric, unlike in the HfO2 dielectric. This significant reduction in trap density close to the Si/SiOx interface can contribute to the improvement in the carrier mobility of MOSFETs with a HfSiO dielectric.

Original languageEnglish
Pages (from-to)1015021-1015023
Number of pages3
JournalJapanese Journal of Applied Physics
Volume49
Issue number10
DOIs
StatePublished - 2010 Oct 1

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