Effect of thermal annealing on structural, electrical, and magnetic properties of Ag-doped la0.67Ca0.33MnO3 thin films grown on LaAlO3 substrates

Peng Xiang Zhang, Shao Jiang Zhu, Xiang Liu, Ju Bo Peng, Taewhan Kim, H. U. Habermeier

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Resistance as a function of temperature showed that the metal-insulator transition temperatures of as-grown and annealed Ag-doped La 0.67Ca0.33MnO3 thin films were 235 and 300 K, respectively, and that the metal-insulator transition ranges of these films were relatively narrow, indicative of a sharp phase transition. The temperature coefficient of resistance was as high as 8% at 276 K. The magnetoresistance ratio of the annealed Ag-doped film under a magnetic field of 5 T was approximately 55% at 285 K (c)2006 The Japan Society of Applied Physics.

Original languageEnglish
Pages (from-to)727-729
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number2 A
DOIs
StatePublished - 2006 Feb 8

Fingerprint

Metal insulator transition
Structural properties
Magnetic properties
Electric properties
electrical properties
insulators
Annealing
magnetic properties
Thin films
annealing
Magnetoresistance
Substrates
thin films
metals
Superconducting transition temperature
Japan
Physics
Phase transitions
transition temperature
Magnetic fields

Keywords

  • Ag-doped LaGaMnO
  • Electrical property
  • Magnetic property
  • Magnetoresistance ratio
  • Thermal annealing

Cite this

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abstract = "Resistance as a function of temperature showed that the metal-insulator transition temperatures of as-grown and annealed Ag-doped La 0.67Ca0.33MnO3 thin films were 235 and 300 K, respectively, and that the metal-insulator transition ranges of these films were relatively narrow, indicative of a sharp phase transition. The temperature coefficient of resistance was as high as 8{\%} at 276 K. The magnetoresistance ratio of the annealed Ag-doped film under a magnetic field of 5 T was approximately 55{\%} at 285 K (c)2006 The Japan Society of Applied Physics.",
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Effect of thermal annealing on structural, electrical, and magnetic properties of Ag-doped la0.67Ca0.33MnO3 thin films grown on LaAlO3 substrates. / Zhang, Peng Xiang; Zhu, Shao Jiang; Liu, Xiang; Peng, Ju Bo; Kim, Taewhan; Habermeier, H. U.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 2 A, 08.02.2006, p. 727-729.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of thermal annealing on structural, electrical, and magnetic properties of Ag-doped la0.67Ca0.33MnO3 thin films grown on LaAlO3 substrates

AU - Zhang, Peng Xiang

AU - Zhu, Shao Jiang

AU - Liu, Xiang

AU - Peng, Ju Bo

AU - Kim, Taewhan

AU - Habermeier, H. U.

PY - 2006/2/8

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AB - Resistance as a function of temperature showed that the metal-insulator transition temperatures of as-grown and annealed Ag-doped La 0.67Ca0.33MnO3 thin films were 235 and 300 K, respectively, and that the metal-insulator transition ranges of these films were relatively narrow, indicative of a sharp phase transition. The temperature coefficient of resistance was as high as 8% at 276 K. The magnetoresistance ratio of the annealed Ag-doped film under a magnetic field of 5 T was approximately 55% at 285 K (c)2006 The Japan Society of Applied Physics.

KW - Ag-doped LaGaMnO

KW - Electrical property

KW - Magnetic property

KW - Magnetoresistance ratio

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