Effect of potassium ferricyanide in the acid solution on performance of tungsten chemical mechanical planarization

Jae Hyung Lim, Jin Hyung Park, Jea Gun Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We investigated the effect of the oxidizer K 3Fe(CN) 6 on the performance of chemical mechanical planarization (CMP) of tungsten film using the acid slurry. The addition of K 3Fe(CN) 6 in the acid slurry formed the K 2WO 4 layer on the tungsten film surface, thereby increasing the polishing rate and decreasing the surface roughness of the tungsten film after CMP, which demonstrated better CMP performance than the oxidizer Fe(NO 3) 3. Furthermore, the addition of H 2O 2 in the acid solution including K 3Fe(CN) 6 enhances the chemical dissolution rate of the K 2WO 4 layer on the tungsten film surface, considerably increasing the polishing rate and decreasing surface roughness of the tungsten film.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume159
Issue number4
DOIs
StatePublished - 2012 Feb 29

Fingerprint

Tungsten
Chemical mechanical polishing
Potassium
potassium
tungsten
acids
Acids
oxidizers
Polishing
polishing
surface roughness
Surface roughness
dissolving
Dissolution
potassium ferricyanide

Cite this

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abstract = "We investigated the effect of the oxidizer K 3Fe(CN) 6 on the performance of chemical mechanical planarization (CMP) of tungsten film using the acid slurry. The addition of K 3Fe(CN) 6 in the acid slurry formed the K 2WO 4 layer on the tungsten film surface, thereby increasing the polishing rate and decreasing the surface roughness of the tungsten film after CMP, which demonstrated better CMP performance than the oxidizer Fe(NO 3) 3. Furthermore, the addition of H 2O 2 in the acid solution including K 3Fe(CN) 6 enhances the chemical dissolution rate of the K 2WO 4 layer on the tungsten film surface, considerably increasing the polishing rate and decreasing surface roughness of the tungsten film.",
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Effect of potassium ferricyanide in the acid solution on performance of tungsten chemical mechanical planarization. / Lim, Jae Hyung; Park, Jin Hyung; Park, Jea Gun.

In: Journal of the Electrochemical Society, Vol. 159, No. 4, 29.02.2012.

Research output: Contribution to journalArticle

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AU - Park, Jea Gun

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