Effect of gas-mixing and substrate temperatures on structural properties of GaN nanorods grown on Si (1 1 1) substrates by using hydride vapor-phase epitaxy

K. H. Lee, J. Y. Lee, Y. H. Kwon, S. Y. Ryu, T. W. Kang, C. H. Yoo, D. U. Lee, T. W. Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

X-ray diffraction patterns, scanning electron microscopy images, and transmission electron microscopy (TEM) images showed that one-dimensional GaN nanorods grown on Si (1 1 1) substarates by using hydride vapor phase epitaxy had crystalline wurzite structures and were preferentially oriented along the [0 0 0 1] direction. The high-resolution TEM (HRTEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of {1̄ 1 0 0}, {1̄ 1 0 2}, and {1̄ 1 0 3} planes. The structural properties of the GaN nanorods were significantly affected by the gas-mixing and the substrate temperatures in the final growth zone.

Original languageEnglish
Pages (from-to)244-248
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number2
DOIs
StatePublished - 2009 Jan 1

Fingerprint

Vapor phase epitaxy
Nanorods
Hydrides
vapor phase epitaxy
nanorods
hydrides
Structural properties
Gases
Substrates
gases
transmission electron microscopy
High resolution transmission electron microscopy
Temperature
Diffraction patterns
temperature
flat surfaces
diffraction patterns
Crystalline materials
Transmission electron microscopy
X ray diffraction

Keywords

  • A1. Nanostructures
  • A3. Hydride vapor phase epitaxy
  • B1. Nanomaterials
  • B2. Semiconducting III-V materials

Cite this

Lee, K. H. ; Lee, J. Y. ; Kwon, Y. H. ; Ryu, S. Y. ; Kang, T. W. ; Yoo, C. H. ; Lee, D. U. ; Kim, T. W. / Effect of gas-mixing and substrate temperatures on structural properties of GaN nanorods grown on Si (1 1 1) substrates by using hydride vapor-phase epitaxy. In: Journal of Crystal Growth. 2009 ; Vol. 311, No. 2. pp. 244-248.
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abstract = "X-ray diffraction patterns, scanning electron microscopy images, and transmission electron microscopy (TEM) images showed that one-dimensional GaN nanorods grown on Si (1 1 1) substarates by using hydride vapor phase epitaxy had crystalline wurzite structures and were preferentially oriented along the [0 0 0 1] direction. The high-resolution TEM (HRTEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of {1̄ 1 0 0}, {1̄ 1 0 2}, and {1̄ 1 0 3} planes. The structural properties of the GaN nanorods were significantly affected by the gas-mixing and the substrate temperatures in the final growth zone.",
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Effect of gas-mixing and substrate temperatures on structural properties of GaN nanorods grown on Si (1 1 1) substrates by using hydride vapor-phase epitaxy. / Lee, K. H.; Lee, J. Y.; Kwon, Y. H.; Ryu, S. Y.; Kang, T. W.; Yoo, C. H.; Lee, D. U.; Kim, T. W.

In: Journal of Crystal Growth, Vol. 311, No. 2, 01.01.2009, p. 244-248.

Research output: Contribution to journalArticle

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T1 - Effect of gas-mixing and substrate temperatures on structural properties of GaN nanorods grown on Si (1 1 1) substrates by using hydride vapor-phase epitaxy

AU - Lee, K. H.

AU - Lee, J. Y.

AU - Kwon, Y. H.

AU - Ryu, S. Y.

AU - Kang, T. W.

AU - Yoo, C. H.

AU - Lee, D. U.

AU - Kim, T. W.

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N2 - X-ray diffraction patterns, scanning electron microscopy images, and transmission electron microscopy (TEM) images showed that one-dimensional GaN nanorods grown on Si (1 1 1) substarates by using hydride vapor phase epitaxy had crystalline wurzite structures and were preferentially oriented along the [0 0 0 1] direction. The high-resolution TEM (HRTEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of {1̄ 1 0 0}, {1̄ 1 0 2}, and {1̄ 1 0 3} planes. The structural properties of the GaN nanorods were significantly affected by the gas-mixing and the substrate temperatures in the final growth zone.

AB - X-ray diffraction patterns, scanning electron microscopy images, and transmission electron microscopy (TEM) images showed that one-dimensional GaN nanorods grown on Si (1 1 1) substarates by using hydride vapor phase epitaxy had crystalline wurzite structures and were preferentially oriented along the [0 0 0 1] direction. The high-resolution TEM (HRTEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of {1̄ 1 0 0}, {1̄ 1 0 2}, and {1̄ 1 0 3} planes. The structural properties of the GaN nanorods were significantly affected by the gas-mixing and the substrate temperatures in the final growth zone.

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