Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping

Seung Ki Jeong, Myeong Ho Kim, Sang Yeon Lee, Hyungtak Seo, Duck Kyun Choi

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

In this study, InGaZnO (IGZO) thin film transistors (TFTs) with a dual active layer (DAL) structure are fabricated by inserting a homogeneous embedded conductive layer (HECL) in an amorphous IGZO (a-IGZO) channel with the aim of enhancing the electrical characteristics of conventional bottom-gate-structure TFTs. A highly conductive HECL (carrier concentration at 1.6 × 1013 cm-2, resistivity at 4.6 × 10-3 Ω∙cm, and Hall mobility at 14.6 cm2/Vs at room temperature) is fabricated using photochemical H-doping by irradiating UV light on an a-IGZO film. The electrical properties of the fabricated DAL TFTs are evaluated by varying the HECL length. The results reveal that carrier mobility increased proportionally with the HECL length. Further, a DAL TFT with a 60-μm-long HECL embedded in an 80-μm-long channel exhibits comprehensive and outstanding improvements in its electrical properties: a saturation mobility of 60.2 cm2/Vs, threshold voltage of 2.7 V, and subthreshold slope of 0.25 V/decade against the initial values of 19.9 cm2/Vs, 4.7 V, and 0.45 V/decade, respectively, for a TFT without HECL. This result confirms that the photochemically H-doped HECL significantly improves the electrical properties of DAL IGZO TFTs.

Original languageEnglish
Article number619
JournalNanoscale Research Letters
Volume9
Issue number1
DOIs
StatePublished - 2014 Jan 1

Fingerprint

Amorphous films
Thin film transistors
transistors
Doping (additives)
thin films
Electric properties
Hall mobility
electrical properties
Carrier mobility
Threshold voltage
Ultraviolet radiation
Carrier concentration
carrier mobility
threshold voltage
slopes
saturation
electrical resistivity

Keywords

  • Dual active layers
  • Hydrogen donor
  • Photochemical doping
  • TFT
  • UV irradiation
  • a-IGZO

Cite this

Jeong, Seung Ki ; Kim, Myeong Ho ; Lee, Sang Yeon ; Seo, Hyungtak ; Choi, Duck Kyun. / Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping. In: Nanoscale Research Letters. 2014 ; Vol. 9, No. 1.
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Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping. / Jeong, Seung Ki; Kim, Myeong Ho; Lee, Sang Yeon; Seo, Hyungtak; Choi, Duck Kyun.

In: Nanoscale Research Letters, Vol. 9, No. 1, 619, 01.01.2014.

Research output: Contribution to journalArticle

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AU - Kim, Myeong Ho

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AB - In this study, InGaZnO (IGZO) thin film transistors (TFTs) with a dual active layer (DAL) structure are fabricated by inserting a homogeneous embedded conductive layer (HECL) in an amorphous IGZO (a-IGZO) channel with the aim of enhancing the electrical characteristics of conventional bottom-gate-structure TFTs. A highly conductive HECL (carrier concentration at 1.6 × 1013 cm-2, resistivity at 4.6 × 10-3 Ω∙cm, and Hall mobility at 14.6 cm2/Vs at room temperature) is fabricated using photochemical H-doping by irradiating UV light on an a-IGZO film. The electrical properties of the fabricated DAL TFTs are evaluated by varying the HECL length. The results reveal that carrier mobility increased proportionally with the HECL length. Further, a DAL TFT with a 60-μm-long HECL embedded in an 80-μm-long channel exhibits comprehensive and outstanding improvements in its electrical properties: a saturation mobility of 60.2 cm2/Vs, threshold voltage of 2.7 V, and subthreshold slope of 0.25 V/decade against the initial values of 19.9 cm2/Vs, 4.7 V, and 0.45 V/decade, respectively, for a TFT without HECL. This result confirms that the photochemically H-doped HECL significantly improves the electrical properties of DAL IGZO TFTs.

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