Dominant direct transitions in annealed GaAs/AlAs multiple quantum wells

Y. T. Oh, T. W. Kang, T. W. Kim

Research output: Contribution to journalArticle


Photoluminescence (PL) and photoreflectance (PR) measurements were performed in order to investigate the formation of the Al0.45Ga0.55As alloys in the GaAs/AlAs multiple quantum wells (MQWs) grown by molecular beam epitaxy (MBE) and treated by rapid thermal annealing. The results of the PL measurements show that a Γ-valley direct transition is dominant in annealed GaAs/AlAs MQWs while an X-valley indirect transition is typical in as-MBE-grown Al0.45Ga0.55As/GaAs. This result indicates that the PL spectrum for the AlxGa1-xAs alloy structure with a high Al mole fraction formed by annealing GaAs/AlAs MQWs shows direct transitions, which holds promise for potential applications in optoelectronic devices.

Original languageEnglish
Pages (from-to)29-32
Number of pages4
JournalApplied Surface Science
Issue number1
StatePublished - 1999 Sep


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