Diffusion limiting mechanism in Si-delta doped GaAs grown by metalorganic chemical vapor deposition

Y. Kim, M. S. Kim, S. K. Min, T. W. Kim

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Capacitance-voltage measurements at room temperatures have been carried out to investigate the spatial localization of Si in delta-doped GaAs grown by atmospheric pressure metalorganic chemical vapor deposition at several doping densities and temperatures. Even though the growth temperature is as high as 750°C, the capacitance-voltage profiles show a full-width at half-maximum value of carrier profiles and a Si diffusion coefficient are 44 Å and 4 × 10-17 cm2 s-1 respectively. The value of the diffusion coefficient is an order of magnitude lower than that for molecular beam epitaxy-grown samples at the same temperature. This result will be discussed by using a diffusion limiting mechanism.

Original languageEnglish
Pages (from-to)453-456
Number of pages4
JournalSolid State Communications
Volume84
Issue number4
DOIs
StatePublished - 1992 Oct
Externally publishedYes

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