Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 °c

Yasutaka Takemura, Du Yeong Lee, Seung Eun Lee, Jea Gun Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top Co2Fe6B2 free layer ex situ annealed at 400 °C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t Pt): it peaked (∼134%) at a specific t Pt (3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the Co2Fe6B2 pinned layer when t Pt increased from 2.0-3.3 nm, and then rapidly decreased from 134%-38.6% by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when t Pt increased from 3.3-14.3 nm.

Original languageEnglish
Article number485203
JournalNanotechnology
Volume27
Issue number48
DOIs
StatePublished - 2016 Oct 31

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Tunnelling magnetoresistance
Platinum
Seed
Magnetic moments

Keywords

  • BEOL
  • Pt seed
  • TMR ratio
  • p-MTJ

Cite this

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title = "Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 °c",
abstract = "For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top Co2Fe6B2 free layer ex situ annealed at 400 °C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t Pt): it peaked (∼134{\%}) at a specific t Pt (3.3 nm). The TMR ratio was initially and slightly increased from 113{\%}-134{\%} by the enhancement of the magnetic moment of the Co2Fe6B2 pinned layer when t Pt increased from 2.0-3.3 nm, and then rapidly decreased from 134{\%}-38.6{\%} by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when t Pt increased from 3.3-14.3 nm.",
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T1 - Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 °c

AU - Takemura, Yasutaka

AU - Lee, Du Yeong

AU - Lee, Seung Eun

AU - Park, Jea Gun

PY - 2016/10/31

Y1 - 2016/10/31

N2 - For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top Co2Fe6B2 free layer ex situ annealed at 400 °C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t Pt): it peaked (∼134%) at a specific t Pt (3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the Co2Fe6B2 pinned layer when t Pt increased from 2.0-3.3 nm, and then rapidly decreased from 134%-38.6% by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when t Pt increased from 3.3-14.3 nm.

AB - For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top Co2Fe6B2 free layer ex situ annealed at 400 °C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t Pt): it peaked (∼134%) at a specific t Pt (3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the Co2Fe6B2 pinned layer when t Pt increased from 2.0-3.3 nm, and then rapidly decreased from 134%-38.6% by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when t Pt increased from 3.3-14.3 nm.

KW - BEOL

KW - Pt seed

KW - TMR ratio

KW - p-MTJ

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