Dependence of the stored charges and tunneling voltages on the tunneling SiO2 thickness for Si nanoparticles embedded in a SiO2 layer

Do Hyun Oh, Soojin Lee, Woon Jo Cho, Taewhan Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Dependence of the stored charges and the tunneling voltages on the tunneling SiO2 thickness for Si nanoparticles embedded in a SiO2 layer formed by the sonochemical method was investigated by using electrostatic force microscopy (EFM) measurements. Bright-field transmission electron microscopy images showed that Si nanoparticles were embedded in a SiO2 layer. EFM images for the Si nanoparticles embedded in a SiO2 layer under applied bias voltages showed that the localized charges remained in the Si nanoparticles embedded in a SiO2 layer. The stored charge in the Si nanoparticles embedded in a SiO2 layer increased with a decrease in the tunneling SiO2 thickness. While the threshold tunneling voltage increased with an increase in the tunneling oxide thickness, the mean amplitude of the tunneling voltage increased with a decrease in the thickness of the tunneling SiO2 layer.

Original languageEnglish
Pages (from-to)3290-3293
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number14
DOIs
StatePublished - 2008 Jul 1

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Nanoparticles
nanoparticles
Electric potential
electric potential
Electrostatic force
Microscopic examination
Bias voltage
electrostatics
microscopy
Oxides
Transmission electron microscopy
transmission electron microscopy
thresholds
oxides

Keywords

  • A1. Nanostructures
  • B1. Nanomaterials
  • B2. Semiconducting silicon

Cite this

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abstract = "Dependence of the stored charges and the tunneling voltages on the tunneling SiO2 thickness for Si nanoparticles embedded in a SiO2 layer formed by the sonochemical method was investigated by using electrostatic force microscopy (EFM) measurements. Bright-field transmission electron microscopy images showed that Si nanoparticles were embedded in a SiO2 layer. EFM images for the Si nanoparticles embedded in a SiO2 layer under applied bias voltages showed that the localized charges remained in the Si nanoparticles embedded in a SiO2 layer. The stored charge in the Si nanoparticles embedded in a SiO2 layer increased with a decrease in the tunneling SiO2 thickness. While the threshold tunneling voltage increased with an increase in the tunneling oxide thickness, the mean amplitude of the tunneling voltage increased with a decrease in the thickness of the tunneling SiO2 layer.",
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Dependence of the stored charges and tunneling voltages on the tunneling SiO2 thickness for Si nanoparticles embedded in a SiO2 layer. / Oh, Do Hyun; Lee, Soojin; Cho, Woon Jo; Kim, Taewhan.

In: Journal of Crystal Growth, Vol. 310, No. 14, 01.07.2008, p. 3290-3293.

Research output: Contribution to journalArticle

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AU - Oh, Do Hyun

AU - Lee, Soojin

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