Dependence of Structural and Electrical Properties on Substrate Temperature for Annealed C54 TiSi2 Thin Films Grown on p-Si Substrates

Sejoon Lee, Deuk Young Kim, Taewhan Kim

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2 Citations (Scopus)

Abstract

Substrate temperature effects on the structural and electrical properties of annealed C54 TiSi2 thin films grown on p-Si (100) substrates using a sputtering method were determined with the objective of improving the properties of the films. The results of scanning electron microscopy, energy-dispersive X-ray fluorescence, and X-ray diffraction measurements showed that the thickness of the C54 TiSi2 thin films increases with increasing substrate temperature and that the sheet resistance decreases with increasing substrate temperature up to 200°C. These results indicate that the structural and electrical properties of annealed C54 TiSi2 thin films grown on p-Si (100) substrates using a sputtering method can be improved by increasing substrate temperature, and that these films grown on p-Si(100) substrates using a high-temperature sputtering method hold promise for potential applications in Si-based ultralarge-scale integration devices.

Original languageEnglish
Pages (from-to)6323-6326
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number10
StatePublished - 2003 Oct 1

Fingerprint

Structural properties
Electric properties
electrical properties
Thin films
Substrates
thin films
Sputtering
sputtering
Temperature
temperature
Sheet resistance
Thermal effects
temperature effects
x rays
Fluorescence
X ray diffraction
X rays
fluorescence
Scanning electron microscopy
scanning electron microscopy

Keywords

  • C54 TiSi
  • Electrical properties
  • Sheet resistance
  • Structural properties
  • Substrate temperature

Cite this

@article{cfa25e73db6244698585b180a481285b,
title = "Dependence of Structural and Electrical Properties on Substrate Temperature for Annealed C54 TiSi2 Thin Films Grown on p-Si Substrates",
abstract = "Substrate temperature effects on the structural and electrical properties of annealed C54 TiSi2 thin films grown on p-Si (100) substrates using a sputtering method were determined with the objective of improving the properties of the films. The results of scanning electron microscopy, energy-dispersive X-ray fluorescence, and X-ray diffraction measurements showed that the thickness of the C54 TiSi2 thin films increases with increasing substrate temperature and that the sheet resistance decreases with increasing substrate temperature up to 200°C. These results indicate that the structural and electrical properties of annealed C54 TiSi2 thin films grown on p-Si (100) substrates using a sputtering method can be improved by increasing substrate temperature, and that these films grown on p-Si(100) substrates using a high-temperature sputtering method hold promise for potential applications in Si-based ultralarge-scale integration devices.",
keywords = "C54 TiSi, Electrical properties, Sheet resistance, Structural properties, Substrate temperature",
author = "Sejoon Lee and Kim, {Deuk Young} and Taewhan Kim",
year = "2003",
month = "10",
day = "1",
language = "English",
volume = "42",
pages = "6323--6326",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",
issn = "0021-4922",
number = "10",

}

TY - JOUR

T1 - Dependence of Structural and Electrical Properties on Substrate Temperature for Annealed C54 TiSi2 Thin Films Grown on p-Si Substrates

AU - Lee, Sejoon

AU - Kim, Deuk Young

AU - Kim, Taewhan

PY - 2003/10/1

Y1 - 2003/10/1

N2 - Substrate temperature effects on the structural and electrical properties of annealed C54 TiSi2 thin films grown on p-Si (100) substrates using a sputtering method were determined with the objective of improving the properties of the films. The results of scanning electron microscopy, energy-dispersive X-ray fluorescence, and X-ray diffraction measurements showed that the thickness of the C54 TiSi2 thin films increases with increasing substrate temperature and that the sheet resistance decreases with increasing substrate temperature up to 200°C. These results indicate that the structural and electrical properties of annealed C54 TiSi2 thin films grown on p-Si (100) substrates using a sputtering method can be improved by increasing substrate temperature, and that these films grown on p-Si(100) substrates using a high-temperature sputtering method hold promise for potential applications in Si-based ultralarge-scale integration devices.

AB - Substrate temperature effects on the structural and electrical properties of annealed C54 TiSi2 thin films grown on p-Si (100) substrates using a sputtering method were determined with the objective of improving the properties of the films. The results of scanning electron microscopy, energy-dispersive X-ray fluorescence, and X-ray diffraction measurements showed that the thickness of the C54 TiSi2 thin films increases with increasing substrate temperature and that the sheet resistance decreases with increasing substrate temperature up to 200°C. These results indicate that the structural and electrical properties of annealed C54 TiSi2 thin films grown on p-Si (100) substrates using a sputtering method can be improved by increasing substrate temperature, and that these films grown on p-Si(100) substrates using a high-temperature sputtering method hold promise for potential applications in Si-based ultralarge-scale integration devices.

KW - C54 TiSi

KW - Electrical properties

KW - Sheet resistance

KW - Structural properties

KW - Substrate temperature

UR - http://www.scopus.com/inward/record.url?scp=0346959663&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0346959663

VL - 42

SP - 6323

EP - 6326

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

SN - 0021-4922

IS - 10

ER -