Dependence of SOI properties on memory characteristics in a cap-less memory cell

Tae Hun Shim, Seong Je Kim, Tae Hyun Kim, Jea Gun Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The material properties of silicon-on-insulator substrate affecting memory characteristics in Cap-less memory cells such as the top silicon thickness, boron concentration, and strain in the channel was investigated to obtain higher memory margin. We demonstrated that the memory margin was maximized at a specific top thickness and boron concentration, i.e., it was enhanced by 3.38 times at the top silicon thickness of 46.9 nm, compared with that at 15.5 nm, and also enhanced by 1.83 times at a boron concentration of 1.4 × 10 17 cm-3. Particularly, it was enhanced by 2.13 times with a bi- axial tensile strained channel.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages325-330
Number of pages6
Edition1
DOIs
StatePublished - 2010 Dec 30
EventAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting - Vancouver, BC, Canada
Duration: 2010 Apr 262010 Apr 27

Publication series

NameECS Transactions
Number1
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period10/04/2610/04/27

Fingerprint

Boron
Data storage equipment
Silicon
Materials properties
Substrates

Cite this

Shim, T. H., Kim, S. J., Kim, T. H., & Park, J. G. (2010). Dependence of SOI properties on memory characteristics in a cap-less memory cell. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment (1 ed., pp. 325-330). (ECS Transactions; Vol. 28, No. 1). https://doi.org/10.1149/1.3375618
Shim, Tae Hun ; Kim, Seong Je ; Kim, Tae Hyun ; Park, Jea Gun. / Dependence of SOI properties on memory characteristics in a cap-less memory cell. Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1. ed. 2010. pp. 325-330 (ECS Transactions; 1).
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title = "Dependence of SOI properties on memory characteristics in a cap-less memory cell",
abstract = "The material properties of silicon-on-insulator substrate affecting memory characteristics in Cap-less memory cells such as the top silicon thickness, boron concentration, and strain in the channel was investigated to obtain higher memory margin. We demonstrated that the memory margin was maximized at a specific top thickness and boron concentration, i.e., it was enhanced by 3.38 times at the top silicon thickness of 46.9 nm, compared with that at 15.5 nm, and also enhanced by 1.83 times at a boron concentration of 1.4 × 10 17 cm-3. Particularly, it was enhanced by 2.13 times with a bi- axial tensile strained channel.",
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Shim, TH, Kim, SJ, Kim, TH & Park, JG 2010, Dependence of SOI properties on memory characteristics in a cap-less memory cell. in Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 edn, ECS Transactions, no. 1, vol. 28, pp. 325-330, Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting, Vancouver, BC, Canada, 10/04/26. https://doi.org/10.1149/1.3375618

Dependence of SOI properties on memory characteristics in a cap-less memory cell. / Shim, Tae Hun; Kim, Seong Je; Kim, Tae Hyun; Park, Jea Gun.

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1. ed. 2010. p. 325-330 (ECS Transactions; Vol. 28, No. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Shim TH, Kim SJ, Kim TH, Park JG. Dependence of SOI properties on memory characteristics in a cap-less memory cell. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 ed. 2010. p. 325-330. (ECS Transactions; 1). https://doi.org/10.1149/1.3375618