Dependence of Hot-Carrier Immunity on Channel Length and Channel Width in MOSFET's with N2O-Grown Gate Oxides

G. Q. Lo, J. Ahn, Dim Lee Kwong, K. K. Young

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This paper reports on the channel length (0.5-5 μm) and width (0.6-10 μm) dependence of hot-carrier immunity in n-MOSFET's with N2O-grown gate oxides (~ 85 Å). While channel hot-carrier-induced degradation has a strong dependence of channel geometry in control devices, the degradation and its channel geometric dependences are greatly suppressed in devices with N2O-gate oxides. Under Fowler-Nordheim (F-N) injection stress, the control device shows an enhanced degradation with decreasing channel length and increasing channel width, whereas the N2O device exhibits less dependence on channel geometry.

Original languageEnglish
Pages (from-to)651-653
Number of pages3
JournalIEEE Electron Device Letters
Volume13
Issue number12
DOIs
StatePublished - 1992 Dec

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