Degradation characteristics of MgO based magnetic tunnel junction caused by surface roughness of Ta/Ru buffer layers

Jung Min Lee, Chul Min Choi, Hiroaki Sukegawa, Jeong Yong Lee, Seiji Mitani, Yun Heub Song

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We investigated how surface roughness of a Ta/Ru buffer layer affects the degradation characteristics on MgO-based magnetic tunnel junctions (MTJs). MTJs with worse surface roughness on the buffer layer showed increased resistance drift and degraded time-dependent dielectric breakdown (TDDB) characteristics. We suggest that this resulted from reduced MgO thickness on the MTJ with worse surface roughness on the buffer layer, which was estimated by the TDDB and analytic approach. As a result, surface roughness of the buffer layer is a critical factors that impacts the reliability of MTJs, and it should be controlled to have the smallest roughness value as possible.

Original languageEnglish
Pages (from-to)654-657
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number1
DOIs
StatePublished - 2016 Jan 1

Keywords

  • Breakdown
  • Buffer layer
  • Degradation
  • Magnetic tunnel junction
  • MgO
  • Surface roughness

Fingerprint Dive into the research topics of 'Degradation characteristics of MgO based magnetic tunnel junction caused by surface roughness of Ta/Ru buffer layers'. Together they form a unique fingerprint.

  • Cite this