Defect reduction and improved gettering in CZ single-crystal silicon

H. Furuya, K. Harada, Jea Gun Park

Research output: Contribution to specialist publicationArticle

2 Citations (Scopus)

Abstract

A Czochralski (CZ) silicon crystal growth technology producing single crystals without grown-in defects was described. The crystals termed as pure silicon were also investigated for their quality and gathering ability. Deep level transition spectroscopy (DLTS) was used to measure the iron (Fe) concentration on the wafers after intentional contamination by Fe using the spin-coat technique to investigate the gathering ability of various pure silicon wafers.

Original languageEnglish
Pages109-114
Number of pages6
Volume44
No6
Specialist publicationSolid State Technology
StatePublished - 2001 Jun 1

Fingerprint

Single crystals
Silicon
Defects
single crystals
defects
silicon
Silicon wafers
Crystal growth
wafers
Contamination
Spectroscopy
Iron
Crystals
crystal growth
contamination
iron
spectroscopy
crystals

Cite this

@misc{cda757be12084937988f8bc4bda32f44,
title = "Defect reduction and improved gettering in CZ single-crystal silicon",
abstract = "A Czochralski (CZ) silicon crystal growth technology producing single crystals without grown-in defects was described. The crystals termed as pure silicon were also investigated for their quality and gathering ability. Deep level transition spectroscopy (DLTS) was used to measure the iron (Fe) concentration on the wafers after intentional contamination by Fe using the spin-coat technique to investigate the gathering ability of various pure silicon wafers.",
author = "H. Furuya and K. Harada and Park, {Jea Gun}",
year = "2001",
month = "6",
day = "1",
language = "English",
volume = "44",
pages = "109--114",
journal = "Solid State Technology",
issn = "0038-111X",

}

Defect reduction and improved gettering in CZ single-crystal silicon. / Furuya, H.; Harada, K.; Park, Jea Gun.

In: Solid State Technology, Vol. 44, No. 6, 01.06.2001, p. 109-114.

Research output: Contribution to specialist publicationArticle

TY - GEN

T1 - Defect reduction and improved gettering in CZ single-crystal silicon

AU - Furuya, H.

AU - Harada, K.

AU - Park, Jea Gun

PY - 2001/6/1

Y1 - 2001/6/1

N2 - A Czochralski (CZ) silicon crystal growth technology producing single crystals without grown-in defects was described. The crystals termed as pure silicon were also investigated for their quality and gathering ability. Deep level transition spectroscopy (DLTS) was used to measure the iron (Fe) concentration on the wafers after intentional contamination by Fe using the spin-coat technique to investigate the gathering ability of various pure silicon wafers.

AB - A Czochralski (CZ) silicon crystal growth technology producing single crystals without grown-in defects was described. The crystals termed as pure silicon were also investigated for their quality and gathering ability. Deep level transition spectroscopy (DLTS) was used to measure the iron (Fe) concentration on the wafers after intentional contamination by Fe using the spin-coat technique to investigate the gathering ability of various pure silicon wafers.

UR - http://www.scopus.com/inward/record.url?scp=0035366064&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035366064

VL - 44

SP - 109

EP - 114

JO - Solid State Technology

JF - Solid State Technology

SN - 0038-111X

ER -