DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 °c in air

Ateeq J. Suria, Ananth Saran Yalamarthy, Hongyun So, Debbie G. Senesky

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

To the best of our knowledge, the 600 °C device characteristics detailed here reflect the highest operation temperature reported for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) in air which supports the realization of electronics for high-temperature applications (e.g., space exploration, combustion and downhole). The high-temperature response of Al2O3/AlGaN/GaN MIS-HEMTs with Al2O3 deposited by plasma-enhanced atomic layer deposition (ALD) as the gate dielectric and passivation layers was examined here. More specifically, the DC current-voltage response and the threshold voltage characteristics of the MIS-HEMTs were evaluated to temperatures up to 600 °C in air. For comparison, the response of AlGaN/GaN HEMTs without the ALD Al2O3 layer was also measured. It was observed that the HEMTs failed above 300 °C accompanied by a ∼500 times increase in leakage current and observation of bubbles formed in active region of gate. On the contrary, the MIS-HEMTs continued to operate normally up to 600 °C. However, within the 30 min period exposed to 600 °C the MIS-HEMT degraded permanently. This was observed at 20 °C after return from operation at 600 °C as a change in threshold voltage and saturation drain current. The failure of the HEMTs is suggested to be due to the diffusion of gate metals (Ni and Au) into the active regions of the AlGaN/GaN heterostructure, which creates additional leakage current pathways. The impact of strain relaxation and interfacial trapped charges on threshold voltage as a function of temperature was studied using an energy band-gap model. The ALD Al2O3 gate dielectric layer acts as a diffusion barrier to the Ni and Au gate metals, thus enabling short-term operation of MIS-HEMTs to 600 °C, the highest operation temperature reported for this device architecture to date.

Original languageEnglish
Article number115017
JournalSemiconductor Science and Technology
Volume31
Issue number11
DOIs
StatePublished - 2016 Oct 13

Fingerprint

Atomic layer deposition
MIS (semiconductors)
High electron mobility transistors
atomic layer epitaxy
high electron mobility transistors
Metals
direct current
Semiconductor materials
air
Air
Threshold voltage
threshold voltage
High temperature operations
Gate dielectrics
Leakage currents
leakage
aluminum gallium nitride
Strain relaxation
High temperature applications
temperature

Keywords

  • Al2O3
  • ALD
  • AlGaN/GaN
  • gate leakage
  • high temperature operation
  • MIS-HEMT
  • threshold voltage

Cite this

Suria, Ateeq J. ; Yalamarthy, Ananth Saran ; So, Hongyun ; Senesky, Debbie G. / DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 °c in air. In: Semiconductor Science and Technology. 2016 ; Vol. 31, No. 11.
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abstract = "To the best of our knowledge, the 600 °C device characteristics detailed here reflect the highest operation temperature reported for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) in air which supports the realization of electronics for high-temperature applications (e.g., space exploration, combustion and downhole). The high-temperature response of Al2O3/AlGaN/GaN MIS-HEMTs with Al2O3 deposited by plasma-enhanced atomic layer deposition (ALD) as the gate dielectric and passivation layers was examined here. More specifically, the DC current-voltage response and the threshold voltage characteristics of the MIS-HEMTs were evaluated to temperatures up to 600 °C in air. For comparison, the response of AlGaN/GaN HEMTs without the ALD Al2O3 layer was also measured. It was observed that the HEMTs failed above 300 °C accompanied by a ∼500 times increase in leakage current and observation of bubbles formed in active region of gate. On the contrary, the MIS-HEMTs continued to operate normally up to 600 °C. However, within the 30 min period exposed to 600 °C the MIS-HEMT degraded permanently. This was observed at 20 °C after return from operation at 600 °C as a change in threshold voltage and saturation drain current. The failure of the HEMTs is suggested to be due to the diffusion of gate metals (Ni and Au) into the active regions of the AlGaN/GaN heterostructure, which creates additional leakage current pathways. The impact of strain relaxation and interfacial trapped charges on threshold voltage as a function of temperature was studied using an energy band-gap model. The ALD Al2O3 gate dielectric layer acts as a diffusion barrier to the Ni and Au gate metals, thus enabling short-term operation of MIS-HEMTs to 600 °C, the highest operation temperature reported for this device architecture to date.",
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DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 °c in air. / Suria, Ateeq J.; Yalamarthy, Ananth Saran; So, Hongyun; Senesky, Debbie G.

In: Semiconductor Science and Technology, Vol. 31, No. 11, 115017, 13.10.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 °c in air

AU - Suria, Ateeq J.

AU - Yalamarthy, Ananth Saran

AU - So, Hongyun

AU - Senesky, Debbie G.

PY - 2016/10/13

Y1 - 2016/10/13

N2 - To the best of our knowledge, the 600 °C device characteristics detailed here reflect the highest operation temperature reported for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) in air which supports the realization of electronics for high-temperature applications (e.g., space exploration, combustion and downhole). The high-temperature response of Al2O3/AlGaN/GaN MIS-HEMTs with Al2O3 deposited by plasma-enhanced atomic layer deposition (ALD) as the gate dielectric and passivation layers was examined here. More specifically, the DC current-voltage response and the threshold voltage characteristics of the MIS-HEMTs were evaluated to temperatures up to 600 °C in air. For comparison, the response of AlGaN/GaN HEMTs without the ALD Al2O3 layer was also measured. It was observed that the HEMTs failed above 300 °C accompanied by a ∼500 times increase in leakage current and observation of bubbles formed in active region of gate. On the contrary, the MIS-HEMTs continued to operate normally up to 600 °C. However, within the 30 min period exposed to 600 °C the MIS-HEMT degraded permanently. This was observed at 20 °C after return from operation at 600 °C as a change in threshold voltage and saturation drain current. The failure of the HEMTs is suggested to be due to the diffusion of gate metals (Ni and Au) into the active regions of the AlGaN/GaN heterostructure, which creates additional leakage current pathways. The impact of strain relaxation and interfacial trapped charges on threshold voltage as a function of temperature was studied using an energy band-gap model. The ALD Al2O3 gate dielectric layer acts as a diffusion barrier to the Ni and Au gate metals, thus enabling short-term operation of MIS-HEMTs to 600 °C, the highest operation temperature reported for this device architecture to date.

AB - To the best of our knowledge, the 600 °C device characteristics detailed here reflect the highest operation temperature reported for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) in air which supports the realization of electronics for high-temperature applications (e.g., space exploration, combustion and downhole). The high-temperature response of Al2O3/AlGaN/GaN MIS-HEMTs with Al2O3 deposited by plasma-enhanced atomic layer deposition (ALD) as the gate dielectric and passivation layers was examined here. More specifically, the DC current-voltage response and the threshold voltage characteristics of the MIS-HEMTs were evaluated to temperatures up to 600 °C in air. For comparison, the response of AlGaN/GaN HEMTs without the ALD Al2O3 layer was also measured. It was observed that the HEMTs failed above 300 °C accompanied by a ∼500 times increase in leakage current and observation of bubbles formed in active region of gate. On the contrary, the MIS-HEMTs continued to operate normally up to 600 °C. However, within the 30 min period exposed to 600 °C the MIS-HEMT degraded permanently. This was observed at 20 °C after return from operation at 600 °C as a change in threshold voltage and saturation drain current. The failure of the HEMTs is suggested to be due to the diffusion of gate metals (Ni and Au) into the active regions of the AlGaN/GaN heterostructure, which creates additional leakage current pathways. The impact of strain relaxation and interfacial trapped charges on threshold voltage as a function of temperature was studied using an energy band-gap model. The ALD Al2O3 gate dielectric layer acts as a diffusion barrier to the Ni and Au gate metals, thus enabling short-term operation of MIS-HEMTs to 600 °C, the highest operation temperature reported for this device architecture to date.

KW - Al2O3

KW - ALD

KW - AlGaN/GaN

KW - gate leakage

KW - high temperature operation

KW - MIS-HEMT

KW - threshold voltage

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M3 - Article

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