Crystal characteristics of bulk GaN single crystal grown by HVPE method with the increase of thickness

Jae Hwa Park, Hee Ae Lee, Joo Hyung Lee, Cheol Woo Park, Jung Hun Lee, Hyo Sang Kang, Hyun Mi Kim, Suk Hyun Kang, Sin Young Bang, Seong Kuk Lee, Kwang Bo Shim

Research output: Contribution to journalArticle

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Abstract

Although GaN has been used in optical materials and power devices, the extent of its application is determined by the crystal quality. Bulk GaN has been reported to produce high-quality GaN. Therefore, it can be used in applications that require high-quality crystals, such as high-brightness light-emitting diode, power devices, etc. We grew a 2-inch bulk GaN crystal, using the hydride vapor phase epitaxy (HVPE) method, on a sapphire substrate to a thickness of ~5 mm. X-ray diffraction (XRD) was used to analyze the structure of GaN. Scanning electron microscopy (SEM) was used to measure the etch pits density (EPD) of GaN after wet chemical etching. In addition, high-resolution XRD (HR-XRD) and Raman spectrometry were employed for radius of curvature and residual strains measurements, respectively.

Original languageEnglish
Pages (from-to)93-97
Number of pages5
JournalJournal of Ceramic Processing Research
Volume18
Issue number2
StatePublished - 2017 Jan 1

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Keywords

  • Bulk GaN
  • Dislocation
  • HVPE
  • Radius curvature
  • Residual thermal strain

Cite this

Park, J. H., Lee, H. A., Lee, J. H., Park, C. W., Lee, J. H., Kang, H. S., Kim, H. M., Kang, S. H., Bang, S. Y., Lee, S. K., & Shim, K. B. (2017). Crystal characteristics of bulk GaN single crystal grown by HVPE method with the increase of thickness. Journal of Ceramic Processing Research, 18(2), 93-97.