Comparison of dielectric wear-out between oxides grown in O2 and N2O

Wenchi Ting, G. Q. Lo, Jinho Ahn, Thomas Y. Chu, Dim Lee Kwong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Abstract

Electrical and reliability properties of MOS gate oxides prepared by furnace oxidation of Si in an N2O ambient have been studied. The thickness uniformity of N2O oxides is comparable to that of the control oxides grown at the same temperature. Time-zero breakdown tests reveal similar breakdown field distributions for both oxides. Devices with N2O gate oxides are less susceptible to charge trapping, interface state generation, and transconductance degradation under electrical stressing than devices with gate oxides grown in O2. Significant improvement in time-to-breakdown (tBD) and charge-to-breakdown (QBD) under substrate electron injection was observed for N2O oxides. Under gate injection, the QBD and tBD values of both N2O and control oxides are comparable. This stress polarity dependence is explained by the nitrogen pile-up at the SiO2/substrate interface.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherPubl by IEEE
Pages323-326
Number of pages4
ISBN (Print)0879426802
Publication statusPublished - 1991 Apr 1
Event29th Annual Proceedings of the International Reliability Physics Symposium - Las Vegas, NV, USA
Duration: 1991 Apr 91991 Apr 11

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Other

Other29th Annual Proceedings of the International Reliability Physics Symposium
CityLas Vegas, NV, USA
Period91/04/991/04/11

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Ting, W., Lo, G. Q., Ahn, J., Chu, T. Y., & Kwong, D. L. (1991). Comparison of dielectric wear-out between oxides grown in O2 and N2O. In Annual Proceedings - Reliability Physics (Symposium) (pp. 323-326). (Annual Proceedings - Reliability Physics (Symposium)). Publ by IEEE.