Comparative study on light-induced bias stress instabilities of IGZO thin film transistors with SiNx and SiOx gate dielectrics

Kwang Hwan Ji, Ji In Kim, Yeon Gon Mo, Shin Hyuck Yang, Sang Hee Ko Park, Jae Kyeong Jeong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We investigated the effect of gate dielectric materials on the light-induced bias-temperature instability of IGZO TFT. The application of light on the negative bias temperature stress (NBTS) accelerated the negative displacement of the threshold voltage (Vth) of the SiO x-gated IGZO TFT. This phenomenon can be attributed to the trapping of the photon-induced carriers into the gate dielectric/channel interface or the gate dielectric bulk. Interestingly, the negative Vth shift under photon-enhanced NBTS condition was deteriorated for the SiNx-gated IGZO TFTs. This result can be explained by considering the hole carrier injection barrier (i.e. valance off-set) and the density of hole trap centers in bulk gate dielectric materials for both devices.

Original languageEnglish
Title of host publication10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Pages486-487
Number of pages2
StatePublished - 2010 Dec 1
Event10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 - Seoul, Korea, Republic of
Duration: 2010 Oct 112010 Oct 15

Publication series

NameProceedings of International Meeting on Information Display
ISSN (Print)1738-7558

Other

Other10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
CountryKorea, Republic of
CitySeoul
Period10/10/1110/10/15

Keywords

  • IGZO
  • Instability
  • Oxide TFT

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    Ji, K. H., Kim, J. I., Mo, Y. G., Yang, S. H., Park, S. H. K., & Jeong, J. K. (2010). Comparative study on light-induced bias stress instabilities of IGZO thin film transistors with SiNx and SiOx gate dielectrics. In 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 (pp. 486-487). (Proceedings of International Meeting on Information Display).