Cobalt thin film deposited by remote plasma atomic layer deposition method using Cl2H10O6(CO)2 and CpCo(CO)2

Keunwoo Lee, Keunjun Kim, Wooho Jeong, Taeyong Park, Hyeongtag Jeon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Co thin films were deposited by remote plasma atomic layer deposition (ALD) method using dicobalt hexacarbonyl t-butylacetylene (C12H 10O6(Co)2) or cyclopentadienyl cobalt dicarbonyl (CpCo(CO)2) as the Co precursor. The impurity contents were minimized when the Co films deposited by remote plasma ALD with H 2 plasma within the process pressure range of 0.1-2 Torr at plasma power of 300W. Co-Cp bond in CpCo(CO)2 precursor was easily broken under H2 remote plasma atmosphere. The carbon content of Co films were examined with Auger electron spectroscopy (AES) and Rutherford backscattering spectroscopy (RBS) to be ∼21 at.% with C12H 10O6(CO)2, and ∼7 at.% with CpCo(CO) 2. The surface morphologies of Co films were measured with atomic force microscope (AFM) and root mean square (RMS) values of Co films using C12H10O6(Co)2 and CpCo(CO) 2 were 1.73Å and 1.51Å, respectively.

Original languageEnglish
Title of host publicationAdvances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PublisherTrans Tech Publications Ltd
Pages359-362
Number of pages4
EditionPART 1
ISBN (Print)3908451310, 9783908451310
StatePublished - 2007 Jan 1
EventIUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of
Duration: 2006 Sep 102006 Sep 14

Publication series

NameSolid State Phenomena
NumberPART 1
Volume124-126
ISSN (Print)1012-0394

Other

OtherIUMRS International Conference in Asia 2006, IUMRS-ICA 2006
CountryKorea, Republic of
CityJeju
Period06/09/1006/09/14

Fingerprint

Plasma deposition
Atomic layer deposition
atomic layer epitaxy
Cobalt
cobalt
Thin films
thin films
Plasmas
Rutherford backscattering spectroscopy
Auger electron spectroscopy
mean square values
Surface morphology
Microscopes
Carbon
Auger spectroscopy
electron spectroscopy
Impurities
backscattering
microscopes
atmospheres

Keywords

  • Cobalt
  • RPALD

Cite this

Lee, K., Kim, K., Jeong, W., Park, T., & Jeon, H. (2007). Cobalt thin film deposited by remote plasma atomic layer deposition method using Cl2H10O6(CO)2 and CpCo(CO)2. In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia (PART 1 ed., pp. 359-362). (Solid State Phenomena; Vol. 124-126, No. PART 1). Trans Tech Publications Ltd.
Lee, Keunwoo ; Kim, Keunjun ; Jeong, Wooho ; Park, Taeyong ; Jeon, Hyeongtag. / Cobalt thin film deposited by remote plasma atomic layer deposition method using Cl2H10O6(CO)2 and CpCo(CO)2. Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1. ed. Trans Tech Publications Ltd, 2007. pp. 359-362 (Solid State Phenomena; PART 1).
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title = "Cobalt thin film deposited by remote plasma atomic layer deposition method using Cl2H10O6(CO)2 and CpCo(CO)2",
abstract = "Co thin films were deposited by remote plasma atomic layer deposition (ALD) method using dicobalt hexacarbonyl t-butylacetylene (C12H 10O6(Co)2) or cyclopentadienyl cobalt dicarbonyl (CpCo(CO)2) as the Co precursor. The impurity contents were minimized when the Co films deposited by remote plasma ALD with H 2 plasma within the process pressure range of 0.1-2 Torr at plasma power of 300W. Co-Cp bond in CpCo(CO)2 precursor was easily broken under H2 remote plasma atmosphere. The carbon content of Co films were examined with Auger electron spectroscopy (AES) and Rutherford backscattering spectroscopy (RBS) to be ∼21 at.{\%} with C12H 10O6(CO)2, and ∼7 at.{\%} with CpCo(CO) 2. The surface morphologies of Co films were measured with atomic force microscope (AFM) and root mean square (RMS) values of Co films using C12H10O6(Co)2 and CpCo(CO) 2 were 1.73{\AA} and 1.51{\AA}, respectively.",
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Lee, K, Kim, K, Jeong, W, Park, T & Jeon, H 2007, Cobalt thin film deposited by remote plasma atomic layer deposition method using Cl2H10O6(CO)2 and CpCo(CO)2. in Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1 edn, Solid State Phenomena, no. PART 1, vol. 124-126, Trans Tech Publications Ltd, pp. 359-362, IUMRS International Conference in Asia 2006, IUMRS-ICA 2006, Jeju, Korea, Republic of, 06/09/10.

Cobalt thin film deposited by remote plasma atomic layer deposition method using Cl2H10O6(CO)2 and CpCo(CO)2. / Lee, Keunwoo; Kim, Keunjun; Jeong, Wooho; Park, Taeyong; Jeon, Hyeongtag.

Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1. ed. Trans Tech Publications Ltd, 2007. p. 359-362 (Solid State Phenomena; Vol. 124-126, No. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Cobalt thin film deposited by remote plasma atomic layer deposition method using Cl2H10O6(CO)2 and CpCo(CO)2

AU - Lee, Keunwoo

AU - Kim, Keunjun

AU - Jeong, Wooho

AU - Park, Taeyong

AU - Jeon, Hyeongtag

PY - 2007/1/1

Y1 - 2007/1/1

N2 - Co thin films were deposited by remote plasma atomic layer deposition (ALD) method using dicobalt hexacarbonyl t-butylacetylene (C12H 10O6(Co)2) or cyclopentadienyl cobalt dicarbonyl (CpCo(CO)2) as the Co precursor. The impurity contents were minimized when the Co films deposited by remote plasma ALD with H 2 plasma within the process pressure range of 0.1-2 Torr at plasma power of 300W. Co-Cp bond in CpCo(CO)2 precursor was easily broken under H2 remote plasma atmosphere. The carbon content of Co films were examined with Auger electron spectroscopy (AES) and Rutherford backscattering spectroscopy (RBS) to be ∼21 at.% with C12H 10O6(CO)2, and ∼7 at.% with CpCo(CO) 2. The surface morphologies of Co films were measured with atomic force microscope (AFM) and root mean square (RMS) values of Co films using C12H10O6(Co)2 and CpCo(CO) 2 were 1.73Å and 1.51Å, respectively.

AB - Co thin films were deposited by remote plasma atomic layer deposition (ALD) method using dicobalt hexacarbonyl t-butylacetylene (C12H 10O6(Co)2) or cyclopentadienyl cobalt dicarbonyl (CpCo(CO)2) as the Co precursor. The impurity contents were minimized when the Co films deposited by remote plasma ALD with H 2 plasma within the process pressure range of 0.1-2 Torr at plasma power of 300W. Co-Cp bond in CpCo(CO)2 precursor was easily broken under H2 remote plasma atmosphere. The carbon content of Co films were examined with Auger electron spectroscopy (AES) and Rutherford backscattering spectroscopy (RBS) to be ∼21 at.% with C12H 10O6(CO)2, and ∼7 at.% with CpCo(CO) 2. The surface morphologies of Co films were measured with atomic force microscope (AFM) and root mean square (RMS) values of Co films using C12H10O6(Co)2 and CpCo(CO) 2 were 1.73Å and 1.51Å, respectively.

KW - Cobalt

KW - RPALD

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M3 - Conference contribution

AN - SCOPUS:38549163830

SN - 3908451310

SN - 9783908451310

T3 - Solid State Phenomena

SP - 359

EP - 362

BT - Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia

PB - Trans Tech Publications Ltd

ER -

Lee K, Kim K, Jeong W, Park T, Jeon H. Cobalt thin film deposited by remote plasma atomic layer deposition method using Cl2H10O6(CO)2 and CpCo(CO)2. In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1 ed. Trans Tech Publications Ltd. 2007. p. 359-362. (Solid State Phenomena; PART 1).