Chemical-beam deposition of GaN films on Si(111) from diethylazidogallium methylhydrazine adduct

Myung Mo Sung, Chang G. Kim, Yunsoo Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The synthesis of GaN films on Si(111) substrates at 400-800°C using single precursor diethylazidogallium methylhydrazine adduct was analyzed. X-ray photoelectron spectroscopy, x-ray diffraction, double crystal x-ray diffraction and scanning electron microscopy were used investigate chemical composition, crystalline structure and morphology of deposited films. High-quality h-GaN films with correct stoichiometry were deposited on Si(111) at low temperature by chemical-beam deposition (CBD). The results show that room-temperature photoluminescence measurements were used to evaluate optical properties of GaN films.

Original languageEnglish
Pages (from-to)461-464
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number3
DOIs
StatePublished - 2004 May 1

Fingerprint

Monomethylhydrazine
methylhydrazine
adducts
x ray diffraction
Diffraction
X rays
Stoichiometry
stoichiometry
Photoluminescence
chemical composition
X ray photoelectron spectroscopy
Optical properties
photoelectron spectroscopy
Crystalline materials
photoluminescence
optical properties
Temperature
Crystals
Scanning electron microscopy
scanning electron microscopy

Cite this

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title = "Chemical-beam deposition of GaN films on Si(111) from diethylazidogallium methylhydrazine adduct",
abstract = "The synthesis of GaN films on Si(111) substrates at 400-800°C using single precursor diethylazidogallium methylhydrazine adduct was analyzed. X-ray photoelectron spectroscopy, x-ray diffraction, double crystal x-ray diffraction and scanning electron microscopy were used investigate chemical composition, crystalline structure and morphology of deposited films. High-quality h-GaN films with correct stoichiometry were deposited on Si(111) at low temperature by chemical-beam deposition (CBD). The results show that room-temperature photoluminescence measurements were used to evaluate optical properties of GaN films.",
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Chemical-beam deposition of GaN films on Si(111) from diethylazidogallium methylhydrazine adduct. / Sung, Myung Mo; Kim, Chang G.; Kim, Yunsoo.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 22, No. 3, 01.05.2004, p. 461-464.

Research output: Contribution to journalArticle

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