Charge storage variations of organic memory devices fabricated by using C 60 molecules embedded in an insulating polymer layer with au and Al electrodes

Sung Hwan Cho, Jae Hun Jung, Jung Hoon Ham, Dea Uk Lee, Taewhan Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Organic memory devices based on a hybrid poly(4-vinyl phenol) (PVP) layer containing Buckminster-fullerene ( C 60) were formed by using a spin coating method. Capacitance-voltage measurements on Al/ C 60 embedded in PVP layer/p-Si (100) devices at 300 K showed a hysteresis with a large flat-band voltage shift due to the existence of C 60 molecules, indicative of the charge storage in the C 60 molecules. The magnitude of the flat-band voltage shift for the memory devices with a hybrid active layer consisting of PVP and C 60 was significantly affected by the type of electrode. The endurance time of the organic memory device fabricated utilizing C 60 nanoparticles embedded in the PVP layer at 300 K was approximately 10 years, indicative of excellent memory endurance ability.

Original languageEnglish
Pages (from-to)4797-4800
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume10
Issue number7
DOIs
StatePublished - 2010 Jul 1

Fingerprint

Polymers
Data storage equipment
Electrodes
Molecules
electrodes
endurance
polymers
molecules
Durability
Fullerenes
Capacitance measurement
shift
Voltage measurement
Spin coating
Electric potential
electric potential
Phenol
phenols
electrical measurement
Phenols

Keywords

  • C
  • C-V hysteresis
  • Electrode
  • Flat-band voltage
  • Organic memory device
  • PVP

Cite this

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abstract = "Organic memory devices based on a hybrid poly(4-vinyl phenol) (PVP) layer containing Buckminster-fullerene ( C 60) were formed by using a spin coating method. Capacitance-voltage measurements on Al/ C 60 embedded in PVP layer/p-Si (100) devices at 300 K showed a hysteresis with a large flat-band voltage shift due to the existence of C 60 molecules, indicative of the charge storage in the C 60 molecules. The magnitude of the flat-band voltage shift for the memory devices with a hybrid active layer consisting of PVP and C 60 was significantly affected by the type of electrode. The endurance time of the organic memory device fabricated utilizing C 60 nanoparticles embedded in the PVP layer at 300 K was approximately 10 years, indicative of excellent memory endurance ability.",
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Charge storage variations of organic memory devices fabricated by using C 60 molecules embedded in an insulating polymer layer with au and Al electrodes. / Cho, Sung Hwan; Jung, Jae Hun; Ham, Jung Hoon; Lee, Dea Uk; Kim, Taewhan.

In: Journal of Nanoscience and Nanotechnology, Vol. 10, No. 7, 01.07.2010, p. 4797-4800.

Research output: Contribution to journalArticle

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AU - Kim, Taewhan

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