Characterization of remote inductively coupled CH 4 - N 2 plasma for carbon nitride thin-film deposition

Hyungtak Seo, Jung Hyung Kim, Kwang Hwa Chung, Ju Youn Kim, Seok Hoon Kim, Hyeongtag Jeon

Research output: Contribution to journalArticle

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Abstract

We investigated reaction characteristics in a C H4 N2 plasma for deposition of amorphous C Nx thin films (a-C Nx) by evaluating the change in electron density using the wave cutoff method, and the behavior of ions and radicals with an optical emission spectroscopy (OES). An inductively coupled plasma source that was 30 cm away from the substrate stage was used for the discharge. The change in electron density in the substrate region and OES spectra in the plasma-source region were evaluated to investigate both the reaction mechanism and the remote effect while varying process conditions such as rf power, pressure, and gas-mixing ratio. We found that the electron density in the remote C H4 N2 plasma was closely related to recombination reactions of major ions such as N2+, C H4+, C H3+, and H2+ during diffusion from the plasma source to the substrate. The electron density and optical emission of major ions and radicals in the C H4 N2 plasma increase at higher rf power. The ratio [N] ([N] + [C]) in a-C Nx films, as measured by auger electron spectroscopy, also increases with rf power since more excited N and C species are generated. For increasing pressure, the change in electron density and emission spectra showed different behavior, which arose from recombination of ions that generated more C H4, Nx (x=1,2), and CN radicals. The majority of positive ions generated from N2 species are greatly affected by the remote effect, while the majority of positive ions generated from C H4 species are not significantly influenced, since each species has different losses dependent on the pressure. A higher N2 gas fraction in the gas mixture generated more CN radicals, which resulted not only in more N incorporated into a-C Nx films but also to a reduction of H passivation that retards formation of hybrid bonding between C and N in the films. These results suggest that efficient H abstraction is required to achieve more N≡C triple bonding in C H4 N2 plasma deposition.

Original languageEnglish
Article number043308
JournalJournal of Applied Physics
Volume98
Issue number4
DOIs
StatePublished - 2005 Aug 15

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carbon nitrides
methylidyne
thin films
optical emission spectroscopy
positive ions
ions
recombination reactions
mixing ratios
gases
passivity
Auger spectroscopy
light emission
gas mixtures
electron spectroscopy
emission spectra
cut-off

Cite this

Seo, Hyungtak ; Kim, Jung Hyung ; Chung, Kwang Hwa ; Kim, Ju Youn ; Kim, Seok Hoon ; Jeon, Hyeongtag. / Characterization of remote inductively coupled CH 4 - N 2 plasma for carbon nitride thin-film deposition. In: Journal of Applied Physics. 2005 ; Vol. 98, No. 4.
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title = "Characterization of remote inductively coupled CH 4 - N 2 plasma for carbon nitride thin-film deposition",
abstract = "We investigated reaction characteristics in a C H4 N2 plasma for deposition of amorphous C Nx thin films (a-C Nx) by evaluating the change in electron density using the wave cutoff method, and the behavior of ions and radicals with an optical emission spectroscopy (OES). An inductively coupled plasma source that was 30 cm away from the substrate stage was used for the discharge. The change in electron density in the substrate region and OES spectra in the plasma-source region were evaluated to investigate both the reaction mechanism and the remote effect while varying process conditions such as rf power, pressure, and gas-mixing ratio. We found that the electron density in the remote C H4 N2 plasma was closely related to recombination reactions of major ions such as N2+, C H4+, C H3+, and H2+ during diffusion from the plasma source to the substrate. The electron density and optical emission of major ions and radicals in the C H4 N2 plasma increase at higher rf power. The ratio [N] ([N] + [C]) in a-C Nx films, as measured by auger electron spectroscopy, also increases with rf power since more excited N and C species are generated. For increasing pressure, the change in electron density and emission spectra showed different behavior, which arose from recombination of ions that generated more C H4, Nx (x=1,2), and CN radicals. The majority of positive ions generated from N2 species are greatly affected by the remote effect, while the majority of positive ions generated from C H4 species are not significantly influenced, since each species has different losses dependent on the pressure. A higher N2 gas fraction in the gas mixture generated more CN radicals, which resulted not only in more N incorporated into a-C Nx films but also to a reduction of H passivation that retards formation of hybrid bonding between C and N in the films. These results suggest that efficient H abstraction is required to achieve more N≡C triple bonding in C H4 N2 plasma deposition.",
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Characterization of remote inductively coupled CH 4 - N 2 plasma for carbon nitride thin-film deposition. / Seo, Hyungtak; Kim, Jung Hyung; Chung, Kwang Hwa; Kim, Ju Youn; Kim, Seok Hoon; Jeon, Hyeongtag.

In: Journal of Applied Physics, Vol. 98, No. 4, 043308, 15.08.2005.

Research output: Contribution to journalArticle

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AU - Kim, Jung Hyung

AU - Chung, Kwang Hwa

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AU - Kim, Seok Hoon

AU - Jeon, Hyeongtag

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AB - We investigated reaction characteristics in a C H4 N2 plasma for deposition of amorphous C Nx thin films (a-C Nx) by evaluating the change in electron density using the wave cutoff method, and the behavior of ions and radicals with an optical emission spectroscopy (OES). An inductively coupled plasma source that was 30 cm away from the substrate stage was used for the discharge. The change in electron density in the substrate region and OES spectra in the plasma-source region were evaluated to investigate both the reaction mechanism and the remote effect while varying process conditions such as rf power, pressure, and gas-mixing ratio. We found that the electron density in the remote C H4 N2 plasma was closely related to recombination reactions of major ions such as N2+, C H4+, C H3+, and H2+ during diffusion from the plasma source to the substrate. The electron density and optical emission of major ions and radicals in the C H4 N2 plasma increase at higher rf power. The ratio [N] ([N] + [C]) in a-C Nx films, as measured by auger electron spectroscopy, also increases with rf power since more excited N and C species are generated. For increasing pressure, the change in electron density and emission spectra showed different behavior, which arose from recombination of ions that generated more C H4, Nx (x=1,2), and CN radicals. The majority of positive ions generated from N2 species are greatly affected by the remote effect, while the majority of positive ions generated from C H4 species are not significantly influenced, since each species has different losses dependent on the pressure. A higher N2 gas fraction in the gas mixture generated more CN radicals, which resulted not only in more N incorporated into a-C Nx films but also to a reduction of H passivation that retards formation of hybrid bonding between C and N in the films. These results suggest that efficient H abstraction is required to achieve more N≡C triple bonding in C H4 N2 plasma deposition.

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