Characterization and passivation of band gap states in metal-oxide- semiconductor field effect transistors with polycrystalline silicon channel

Tae Young Jang, Dong Hyoub Kim, Jungwoo Kim, Jun Suk Chang, Hoichang Yang, Jae Kyeong Jeong, Daeseok Lee, Hyunsang Hwang, Rino Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

High density of states in energy bandgap causes low carrier mobility and poor reliability in devices with poly-Si channel. Trap state densities of poly-Si devices in grain boundary and at dielectric interface were evaluated using Meyer-Neldel rule and charge pumping method. It was found that H 2 high pressure anneal was very effective in passivating both trap states in grain boundary and at dielectric interface. The passivation of traps leads to significant improvement of performance and device reliability.

Original languageEnglish
Title of host publication18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011
DOIs
Publication statusPublished - 2011 Sep 15
Event18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011 - Incheon, Korea, Republic of
Duration: 2011 Jul 42011 Jul 7

Other

Other18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011
CountryKorea, Republic of
CityIncheon
Period11/07/411/07/7

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Jang, T. Y., Kim, D. H., Kim, J., Chang, J. S., Yang, H., Jeong, J. K., ... Choi, R. (2011). Characterization and passivation of band gap states in metal-oxide- semiconductor field effect transistors with polycrystalline silicon channel. In 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011 [5992724] https://doi.org/10.1109/IPFA.2011.5992724